Interdigital transducers with control gates on AlGaN/GaN heterostructures

Naoteru Shigekawa; Kazumi Nishimura; Tetsuya Suemitsu; Haruki Yokoyama; Kohji Hohkawa

doi:10.1063/1.2221899

Interdigital transducers with control gates on AlGaN/GaN heterostructures

Naoteru Shigekawa, Kazumi Nishimura, Tetsuya Suemitsu, Haruki Yokoyama, Kohji Hohkawa

New Industry Creation Hatchery Center (NICHe)

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

We investigated surface acoustic wave (SAW) filters composed of interdigital transducers with control gates formed on AlGaN/GaN heterostructures. The contribution of SAWs appeared in the rf characteristics of the SAW filters when reverse-bias voltages were applied to the control gates and the GaN channels were depleted. We also observed higher-frequency signals due to SAWs in transducers with positively-biased control gates. These results suggest that SAW-based functional devices are achievable by employing transducers in which rf signals for exciting SAWs and control signals for modulating SAW properties are applied to different terminals.

Original language	English
Article number	033501
Journal	Applied Physics Letters
Volume	89
Issue number	3
DOIs	https://doi.org/10.1063/1.2221899
Publication status	Published - 2006

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@article{95c7ce2b9a254124a0e35e2c808b3d4b,

title = "Interdigital transducers with control gates on AlGaN/GaN heterostructures",

abstract = "We investigated surface acoustic wave (SAW) filters composed of interdigital transducers with control gates formed on AlGaN/GaN heterostructures. The contribution of SAWs appeared in the rf characteristics of the SAW filters when reverse-bias voltages were applied to the control gates and the GaN channels were depleted. We also observed higher-frequency signals due to SAWs in transducers with positively-biased control gates. These results suggest that SAW-based functional devices are achievable by employing transducers in which rf signals for exciting SAWs and control signals for modulating SAW properties are applied to different terminals.",

author = "Naoteru Shigekawa and Kazumi Nishimura and Tetsuya Suemitsu and Haruki Yokoyama and Kohji Hohkawa",

year = "2006",

doi = "10.1063/1.2221899",

language = "English",

volume = "89",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "3",

}

TY - JOUR

T1 - Interdigital transducers with control gates on AlGaN/GaN heterostructures

AU - Shigekawa, Naoteru

AU - Nishimura, Kazumi

AU - Suemitsu, Tetsuya

AU - Yokoyama, Haruki

AU - Hohkawa, Kohji

PY - 2006

Y1 - 2006

N2 - We investigated surface acoustic wave (SAW) filters composed of interdigital transducers with control gates formed on AlGaN/GaN heterostructures. The contribution of SAWs appeared in the rf characteristics of the SAW filters when reverse-bias voltages were applied to the control gates and the GaN channels were depleted. We also observed higher-frequency signals due to SAWs in transducers with positively-biased control gates. These results suggest that SAW-based functional devices are achievable by employing transducers in which rf signals for exciting SAWs and control signals for modulating SAW properties are applied to different terminals.

AB - We investigated surface acoustic wave (SAW) filters composed of interdigital transducers with control gates formed on AlGaN/GaN heterostructures. The contribution of SAWs appeared in the rf characteristics of the SAW filters when reverse-bias voltages were applied to the control gates and the GaN channels were depleted. We also observed higher-frequency signals due to SAWs in transducers with positively-biased control gates. These results suggest that SAW-based functional devices are achievable by employing transducers in which rf signals for exciting SAWs and control signals for modulating SAW properties are applied to different terminals.

UR - http://www.scopus.com/inward/record.url?scp=33746277499&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33746277499&partnerID=8YFLogxK

U2 - 10.1063/1.2221899

DO - 10.1063/1.2221899

M3 - Article

AN - SCOPUS:33746277499

SN - 0003-6951

VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 3

M1 - 033501

ER -

Interdigital transducers with control gates on AlGaN/GaN heterostructures

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