Interface atomic-scale structure and its impact on quantum electron transport

Zhongchang Wang; Mitsuhiro Saito; Susumu Tsukimoto; Yuichi Ikuhara

doi:10.1002/adma.200900877

Interface atomic-scale structure and its impact on quantum electron transport

Zhongchang Wang, Mitsuhiro Saito, Susumu Tsukimoto, Yuichi Ikuhara

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

Local structure, chemistry, and bonding at interfaces often radically affect the properties of materials. A combination of scanning transmission electron microscopy and density functional theory calculations reveals an atomic layer of carbon at a SiC/ Ti₃SiC₂ interface in Ohmic contact to p-type SiC (see image), which results in stronger adhesion, a lowered Schottky barrier, and enhanced transport. This is a key factor to understanding the origin of the Ohmic nature.

Original language	English
Pages (from-to)	4966-4969
Number of pages	4
Journal	Advanced Materials
Volume	21
Issue number	48
DOIs	https://doi.org/10.1002/adma.200900877
Publication status	Published - 2009 Dec 28

ASJC Scopus subject areas

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

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abstract = "Local structure, chemistry, and bonding at interfaces often radically affect the properties of materials. A combination of scanning transmission electron microscopy and density functional theory calculations reveals an atomic layer of carbon at a SiC/ Ti3SiC2 interface in Ohmic contact to p-type SiC (see image), which results in stronger adhesion, a lowered Schottky barrier, and enhanced transport. This is a key factor to understanding the origin of the Ohmic nature.",

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AU - Wang, Zhongchang

AU - Saito, Mitsuhiro

AU - Tsukimoto, Susumu

AU - Ikuhara, Yuichi

PY - 2009/12/28

Y1 - 2009/12/28

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AB - Local structure, chemistry, and bonding at interfaces often radically affect the properties of materials. A combination of scanning transmission electron microscopy and density functional theory calculations reveals an atomic layer of carbon at a SiC/ Ti3SiC2 interface in Ohmic contact to p-type SiC (see image), which results in stronger adhesion, a lowered Schottky barrier, and enhanced transport. This is a key factor to understanding the origin of the Ohmic nature.

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Interface atomic-scale structure and its impact on quantum electron transport

Abstract

ASJC Scopus subject areas

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