Interface atomic structure of LaCuOSe:Mg epitaxial thin film and MgO substrate

Tetsuya Tohei; Teruyasu Mizoguchi; Hidenori Hiramatsu; Hideo Hosono; Yuichi Ikuhara

doi:10.1016/j.mseb.2009.12.024

Interface atomic structure of LaCuOSe:Mg epitaxial thin film and MgO substrate

Tetsuya Tohei, Teruyasu Mizoguchi, Hidenori Hiramatsu, Hideo Hosono, Yuichi Ikuhara

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

In order to understand the growth mechanism of magnesium doped LaCuOSe thin film on MgO, the atomic structure of the interface between the epitaxial thin film and the substrate was investigated. Electron diffraction confirmed the orientation relationship between the film and the substrate as (0 0 1)[1 0 0]LaCuOSe:Mg//(0 0 1)[1 0 0]MgO. High resolution Z-contrast imaging based on the high angle annular dark field scanning transmission electron microscope (HAADF-STEM) technique clearly revealed the alternate stacking of La-O layers and Cu-Se layers, and identified a peculiar stacking sequence of La layers at the interface. With the aid of first principles calculations of the interfacial adhesive energy, it was found that the different La layers at the interface play a key role in stabilizing the interface.

Original language	English
Pages (from-to)	229-233
Number of pages	5
Journal	Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume	173
Issue number	1-3
DOIs	https://doi.org/10.1016/j.mseb.2009.12.024
Publication status	Published - 2010
Externally published	Yes

Keywords

First principles calculation
HAADF-STEM
Heterointerface
LaCuOSe compound
Reactive solid-phase epitaxy

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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title = "Interface atomic structure of LaCuOSe:Mg epitaxial thin film and MgO substrate",

abstract = "In order to understand the growth mechanism of magnesium doped LaCuOSe thin film on MgO, the atomic structure of the interface between the epitaxial thin film and the substrate was investigated. Electron diffraction confirmed the orientation relationship between the film and the substrate as (0 0 1)[1 0 0]LaCuOSe:Mg//(0 0 1)[1 0 0]MgO. High resolution Z-contrast imaging based on the high angle annular dark field scanning transmission electron microscope (HAADF-STEM) technique clearly revealed the alternate stacking of La-O layers and Cu-Se layers, and identified a peculiar stacking sequence of La layers at the interface. With the aid of first principles calculations of the interfacial adhesive energy, it was found that the different La layers at the interface play a key role in stabilizing the interface.",

keywords = "First principles calculation, HAADF-STEM, Heterointerface, LaCuOSe compound, Reactive solid-phase epitaxy",

author = "Tetsuya Tohei and Teruyasu Mizoguchi and Hidenori Hiramatsu and Hideo Hosono and Yuichi Ikuhara",

note = "Funding Information: We acknowledge N. Saito for preparing the TEM specimen. This study was supported by a Grant-in-Aid for Scientific Research in Priority Area “Nano Materials Science for Atomic Scale Modification 474” and Young Scientists (B) 20760449, from the Ministry of Education, Sports, and Culture of Japan. A part of this work was conducted in the Center for Nano Lithography and Analysis, The University of Tokyo, supported by the MEXT, Japan.",

year = "2010",

doi = "10.1016/j.mseb.2009.12.024",

language = "English",

volume = "173",

pages = "229--233",

journal = "Materials Science and Engineering B: Solid-State Materials for Advanced Technology",

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publisher = "Elsevier BV",

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T1 - Interface atomic structure of LaCuOSe:Mg epitaxial thin film and MgO substrate

AU - Tohei, Tetsuya

AU - Mizoguchi, Teruyasu

AU - Hiramatsu, Hidenori

AU - Hosono, Hideo

AU - Ikuhara, Yuichi

N1 - Funding Information: We acknowledge N. Saito for preparing the TEM specimen. This study was supported by a Grant-in-Aid for Scientific Research in Priority Area “Nano Materials Science for Atomic Scale Modification 474” and Young Scientists (B) 20760449, from the Ministry of Education, Sports, and Culture of Japan. A part of this work was conducted in the Center for Nano Lithography and Analysis, The University of Tokyo, supported by the MEXT, Japan.

PY - 2010

Y1 - 2010

N2 - In order to understand the growth mechanism of magnesium doped LaCuOSe thin film on MgO, the atomic structure of the interface between the epitaxial thin film and the substrate was investigated. Electron diffraction confirmed the orientation relationship between the film and the substrate as (0 0 1)[1 0 0]LaCuOSe:Mg//(0 0 1)[1 0 0]MgO. High resolution Z-contrast imaging based on the high angle annular dark field scanning transmission electron microscope (HAADF-STEM) technique clearly revealed the alternate stacking of La-O layers and Cu-Se layers, and identified a peculiar stacking sequence of La layers at the interface. With the aid of first principles calculations of the interfacial adhesive energy, it was found that the different La layers at the interface play a key role in stabilizing the interface.

AB - In order to understand the growth mechanism of magnesium doped LaCuOSe thin film on MgO, the atomic structure of the interface between the epitaxial thin film and the substrate was investigated. Electron diffraction confirmed the orientation relationship between the film and the substrate as (0 0 1)[1 0 0]LaCuOSe:Mg//(0 0 1)[1 0 0]MgO. High resolution Z-contrast imaging based on the high angle annular dark field scanning transmission electron microscope (HAADF-STEM) technique clearly revealed the alternate stacking of La-O layers and Cu-Se layers, and identified a peculiar stacking sequence of La layers at the interface. With the aid of first principles calculations of the interfacial adhesive energy, it was found that the different La layers at the interface play a key role in stabilizing the interface.

KW - First principles calculation

KW - HAADF-STEM

KW - Heterointerface

KW - LaCuOSe compound

KW - Reactive solid-phase epitaxy

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JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

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Interface atomic structure of LaCuOSe:Mg epitaxial thin film and MgO substrate

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Keywords

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