Interface characterization of magnetic tunnel junctions by using tunneling spectroscopy

Y. Ando; M. Hayashi; M. Oogane; H. Kubota; T. Miyazaki

doi:10.1063/1.1540172

Interface characterization of magnetic tunnel junctions by using tunneling spectroscopy

Y. Ando, M. Hayashi, M. Oogane, H. Kubota, T. Miyazaki

ENG - Applied Physics

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

The interface characterization of magnetic tunnel junctions using tunneling spectroscopy was discussed. It was found the tunnel magnetoresistance (TMR) ratio increased at the doped Al thickness of 0.2 nm after annealing at 250°C. The analysis showed that over the corresponding voltage, the TMR ration as a function of the bias decreased however the influence was relatively small.

Original language	English
Pages (from-to)	7023-7025
Number of pages	3
Journal	Journal of Applied Physics
Volume	93
Issue number	10 2
DOIs	https://doi.org/10.1063/1.1540172
Publication status	Published - 2003 May 15

ASJC Scopus subject areas

Physics and Astronomy(all)

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title = "Interface characterization of magnetic tunnel junctions by using tunneling spectroscopy",

abstract = "The interface characterization of magnetic tunnel junctions using tunneling spectroscopy was discussed. It was found the tunnel magnetoresistance (TMR) ratio increased at the doped Al thickness of 0.2 nm after annealing at 250°C. The analysis showed that over the corresponding voltage, the TMR ration as a function of the bias decreased however the influence was relatively small.",

author = "Y. Ando and M. Hayashi and M. Oogane and H. Kubota and T. Miyazaki",

year = "2003",

month = may,

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doi = "10.1063/1.1540172",

language = "English",

volume = "93",

pages = "7023--7025",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "10 2",

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TY - JOUR

T1 - Interface characterization of magnetic tunnel junctions by using tunneling spectroscopy

AU - Ando, Y.

AU - Hayashi, M.

AU - Oogane, M.

AU - Kubota, H.

AU - Miyazaki, T.

PY - 2003/5/15

Y1 - 2003/5/15

N2 - The interface characterization of magnetic tunnel junctions using tunneling spectroscopy was discussed. It was found the tunnel magnetoresistance (TMR) ratio increased at the doped Al thickness of 0.2 nm after annealing at 250°C. The analysis showed that over the corresponding voltage, the TMR ration as a function of the bias decreased however the influence was relatively small.

AB - The interface characterization of magnetic tunnel junctions using tunneling spectroscopy was discussed. It was found the tunnel magnetoresistance (TMR) ratio increased at the doped Al thickness of 0.2 nm after annealing at 250°C. The analysis showed that over the corresponding voltage, the TMR ration as a function of the bias decreased however the influence was relatively small.

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U2 - 10.1063/1.1540172

DO - 10.1063/1.1540172

M3 - Article

AN - SCOPUS:0038624547

SN - 0021-8979

VL - 93

SP - 7023

EP - 7025

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 10 2

ER -

Interface characterization of magnetic tunnel junctions by using tunneling spectroscopy

Abstract

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