The interface characterization of magnetic tunnel junctions using tunneling spectroscopy was discussed. It was found the tunnel magnetoresistance (TMR) ratio increased at the doped Al thickness of 0.2 nm after annealing at 250°C. The analysis showed that over the corresponding voltage, the TMR ration as a function of the bias decreased however the influence was relatively small.
|Number of pages||3|
|Journal||Journal of Applied Physics|
|Issue number||10 2|
|Publication status||Published - 2003 May 15|
ASJC Scopus subject areas
- Physics and Astronomy(all)