Interface-dependent magnetotransport properties for thin Pt films on ferrimagnetic Y3Fe5O12

Y. Shiomi; T. Ohtani; S. Iguchi; T. Sasaki; Z. Qiu; H. Nakayama; K. Uchida; E. Saitoh

doi:10.1063/1.4883898

Interface-dependent magnetotransport properties for thin Pt films on ferrimagnetic Y₃Fe₅O₁₂

Y. Shiomi, T. Ohtani, S. Iguchi, T. Sasaki, Z. Qiu, H. Nakayama, K. Uchida, E. Saitoh

Research output: Contribution to journal › Article › peer-review

25 Citations (Scopus)

Abstract

We have studied magnetoresistance and Hall effects for 1.8-nm-thick Pt films grown on a ferrimagnetic insulator Y₃Fe₅O ₁₂ in a wide temperature (0.46-300 K) and magnetic-field (-15 to 15 T) region. In the low-temperature regime where quantum corrections to conductivity are observed, weak antilocalization behavior observed in Pt films is critically suppressed when the film is attached to Y₃Fe ₅O₁₂. Hall resistance in the Pt film is also affected by Y₃Fe₅O₁₂, and it exhibits logarithmic temperature dependence in a broad temperature range. The magnetotransport properties in the high-field range are significantly influenced by the interface between Pt and Y₃Fe₅O₁₂.

Original language	English
Article number	242406
Journal	Applied Physics Letters
Volume	104
Issue number	24
DOIs	https://doi.org/10.1063/1.4883898
Publication status	Published - 2014 Jun 16

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Interface-dependent magnetotransport properties for thin Pt films on ferrimagnetic Y3Fe5O12",

abstract = "We have studied magnetoresistance and Hall effects for 1.8-nm-thick Pt films grown on a ferrimagnetic insulator Y3Fe5O 12 in a wide temperature (0.46-300 K) and magnetic-field (-15 to 15 T) region. In the low-temperature regime where quantum corrections to conductivity are observed, weak antilocalization behavior observed in Pt films is critically suppressed when the film is attached to Y3Fe 5O12. Hall resistance in the Pt film is also affected by Y3Fe5O12, and it exhibits logarithmic temperature dependence in a broad temperature range. The magnetotransport properties in the high-field range are significantly influenced by the interface between Pt and Y3Fe5O12.",

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T1 - Interface-dependent magnetotransport properties for thin Pt films on ferrimagnetic Y3Fe5O12

AU - Shiomi, Y.

AU - Ohtani, T.

AU - Iguchi, S.

AU - Sasaki, T.

AU - Qiu, Z.

AU - Nakayama, H.

AU - Uchida, K.

AU - Saitoh, E.

PY - 2014/6/16

Y1 - 2014/6/16

N2 - We have studied magnetoresistance and Hall effects for 1.8-nm-thick Pt films grown on a ferrimagnetic insulator Y3Fe5O 12 in a wide temperature (0.46-300 K) and magnetic-field (-15 to 15 T) region. In the low-temperature regime where quantum corrections to conductivity are observed, weak antilocalization behavior observed in Pt films is critically suppressed when the film is attached to Y3Fe 5O12. Hall resistance in the Pt film is also affected by Y3Fe5O12, and it exhibits logarithmic temperature dependence in a broad temperature range. The magnetotransport properties in the high-field range are significantly influenced by the interface between Pt and Y3Fe5O12.

AB - We have studied magnetoresistance and Hall effects for 1.8-nm-thick Pt films grown on a ferrimagnetic insulator Y3Fe5O 12 in a wide temperature (0.46-300 K) and magnetic-field (-15 to 15 T) region. In the low-temperature regime where quantum corrections to conductivity are observed, weak antilocalization behavior observed in Pt films is critically suppressed when the film is attached to Y3Fe 5O12. Hall resistance in the Pt film is also affected by Y3Fe5O12, and it exhibits logarithmic temperature dependence in a broad temperature range. The magnetotransport properties in the high-field range are significantly influenced by the interface between Pt and Y3Fe5O12.

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Interface-dependent magnetotransport properties for thin Pt films on ferrimagnetic Y₃Fe₅O₁₂

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