Interface electronic structure in MnAs on GaAs (001) studied by in situ photoemission spectroscopy

J. Okabayashi; K. Kanal; K. Kubo; S. Toyoda; M. Oshima; K. Ono; J. Yoshino

doi:10.1063/1.2217256

Interface electronic structure in MnAs on GaAs (001) studied by in situ photoemission spectroscopy

J. Okabayashi, K. Kanal, K. Kubo, S. Toyoda, M. Oshima, K. Ono, J. Yoshino

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

We have investigated the relationship between surface morphology and electronic structure of MnAs on GaAs (001) depending on the MnAs layer thickness using in situ photoemission spectroscopy. For less than 4 ML (monolayer) growth of MnAs, metallic and ferromagnetic properties were not observed due to the island growth. Valence-band photoemission spectra revealed that the localized Mn 3d states for less than 4 ML growth gradually change to the itinerant characteristics with increasing MnAs layer thickness. Core-level photoemission spectra have revealed that the Ga atoms are not segregated onto the surface and an abrupt interface is identified.

Original language	English
Article number	022502
Journal	Applied Physics Letters
Volume	89
Issue number	2
DOIs	https://doi.org/10.1063/1.2217256
Publication status	Published - 2006
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{8ac972f186cd4958aa38766f02d0b51d,

title = "Interface electronic structure in MnAs on GaAs (001) studied by in situ photoemission spectroscopy",

abstract = "We have investigated the relationship between surface morphology and electronic structure of MnAs on GaAs (001) depending on the MnAs layer thickness using in situ photoemission spectroscopy. For less than 4 ML (monolayer) growth of MnAs, metallic and ferromagnetic properties were not observed due to the island growth. Valence-band photoemission spectra revealed that the localized Mn 3d states for less than 4 ML growth gradually change to the itinerant characteristics with increasing MnAs layer thickness. Core-level photoemission spectra have revealed that the Ga atoms are not segregated onto the surface and an abrupt interface is identified.",

author = "J. Okabayashi and K. Kanal and K. Kubo and S. Toyoda and M. Oshima and K. Ono and J. Yoshino",

note = "Funding Information: This work was performed under Project No. 02S2-002 at the Institute of Materials Structure Science in KEK and partially supported by the Inamori Foundation. The authors acknowledge the technical support of Y. Osafuney.",

year = "2006",

doi = "10.1063/1.2217256",

language = "English",

volume = "89",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "2",

}

TY - JOUR

T1 - Interface electronic structure in MnAs on GaAs (001) studied by in situ photoemission spectroscopy

AU - Okabayashi, J.

AU - Kanal, K.

AU - Kubo, K.

AU - Toyoda, S.

AU - Oshima, M.

AU - Ono, K.

AU - Yoshino, J.

N1 - Funding Information: This work was performed under Project No. 02S2-002 at the Institute of Materials Structure Science in KEK and partially supported by the Inamori Foundation. The authors acknowledge the technical support of Y. Osafuney.

PY - 2006

Y1 - 2006

N2 - We have investigated the relationship between surface morphology and electronic structure of MnAs on GaAs (001) depending on the MnAs layer thickness using in situ photoemission spectroscopy. For less than 4 ML (monolayer) growth of MnAs, metallic and ferromagnetic properties were not observed due to the island growth. Valence-band photoemission spectra revealed that the localized Mn 3d states for less than 4 ML growth gradually change to the itinerant characteristics with increasing MnAs layer thickness. Core-level photoemission spectra have revealed that the Ga atoms are not segregated onto the surface and an abrupt interface is identified.

AB - We have investigated the relationship between surface morphology and electronic structure of MnAs on GaAs (001) depending on the MnAs layer thickness using in situ photoemission spectroscopy. For less than 4 ML (monolayer) growth of MnAs, metallic and ferromagnetic properties were not observed due to the island growth. Valence-band photoemission spectra revealed that the localized Mn 3d states for less than 4 ML growth gradually change to the itinerant characteristics with increasing MnAs layer thickness. Core-level photoemission spectra have revealed that the Ga atoms are not segregated onto the surface and an abrupt interface is identified.

UR - http://www.scopus.com/inward/record.url?scp=33746217380&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33746217380&partnerID=8YFLogxK

U2 - 10.1063/1.2217256

DO - 10.1063/1.2217256

M3 - Article

AN - SCOPUS:33746217380

SN - 0003-6951

VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

M1 - 022502

ER -

Interface electronic structure in MnAs on GaAs (001) studied by in situ photoemission spectroscopy

Abstract

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