Interface Fermi level pinning in a Cu/p-CuGaS2 Schottky diode

M. Sugiyama, R. Nakai, H. Nakanishi, Sf Chichibu

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


A Schottky contact to p-type CuGaS2 that showed the highest rectification ratio of approximately 500 ever reported was realized using a Cu electrode on a HF/HNO3-treated surface, as well as an excellent Au ohmic contact on a HF-etched surface. The effective Schottky barrier height of 0.9 eV was obtained from the current-voltage and capacitance-voltage characteristics. The value was smaller by 1.1 eV than that calculated from the values of the work function of Cu and electron affinity of CuGaS2. The results indicated a surface pinning of the Fermi level to certain acceptor-type gap states below the midgap.

Original languageEnglish
Pages (from-to)1787-1790
Number of pages4
JournalJournal of Physics and Chemistry of Solids
Issue number9-10
Publication statusPublished - 2003 Sept


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