TY - JOUR
T1 - Interface Fermi level pinning in a Cu/p-CuGaS2 Schottky diode
AU - Sugiyama, M.
AU - Nakai, R.
AU - Nakanishi, H.
AU - Chichibu, Sf
N1 - Funding Information:
The authors are grateful to Dr. Alex Zunger, Dr. S.-H. Wei, and Prof. Sho Shirakata for stimulating discussions. This work was supported in part by the 21st Century COE program ‘Promotion of Creative Interdisciplinary Materials Science for Novel Functions’ under Ministry of Education, Culture, Sports, Science and Technology of Japan.
PY - 2003/9
Y1 - 2003/9
N2 - A Schottky contact to p-type CuGaS2 that showed the highest rectification ratio of approximately 500 ever reported was realized using a Cu electrode on a HF/HNO3-treated surface, as well as an excellent Au ohmic contact on a HF-etched surface. The effective Schottky barrier height of 0.9 eV was obtained from the current-voltage and capacitance-voltage characteristics. The value was smaller by 1.1 eV than that calculated from the values of the work function of Cu and electron affinity of CuGaS2. The results indicated a surface pinning of the Fermi level to certain acceptor-type gap states below the midgap.
AB - A Schottky contact to p-type CuGaS2 that showed the highest rectification ratio of approximately 500 ever reported was realized using a Cu electrode on a HF/HNO3-treated surface, as well as an excellent Au ohmic contact on a HF-etched surface. The effective Schottky barrier height of 0.9 eV was obtained from the current-voltage and capacitance-voltage characteristics. The value was smaller by 1.1 eV than that calculated from the values of the work function of Cu and electron affinity of CuGaS2. The results indicated a surface pinning of the Fermi level to certain acceptor-type gap states below the midgap.
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U2 - 10.1016/S0022-3697(03)00144-6
DO - 10.1016/S0022-3697(03)00144-6
M3 - Article
AN - SCOPUS:0042737903
SN - 0022-3697
VL - 64
SP - 1787
EP - 1790
JO - Journal of Physics and Chemistry of Solids
JF - Journal of Physics and Chemistry of Solids
IS - 9-10
ER -