TY - JOUR
T1 - Interface modification by hydrocarbon gas molecular beams in heteroepitaxy of sic on si
AU - Yoshinobu, Tatsuo
AU - Fuyuki, Takashi
AU - Matsunami, Hiroyuki
PY - 1991/6
Y1 - 1991/6
N2 - Carbonization of Si surfaces using hydrocarbon gas molecular beams was investigated. In the case of carbonizing bare Si surfaces with C2H2, single-crystalline 3C-SiC layers were obtained only in the narrow range of a substrate temperature near 780°C. Among various surface treatments, the existence of a surface oxide layer and temperature rise during carbonization is proved to be effective in reproducibly obtaining single-crystalline 3C-SiC layers.
AB - Carbonization of Si surfaces using hydrocarbon gas molecular beams was investigated. In the case of carbonizing bare Si surfaces with C2H2, single-crystalline 3C-SiC layers were obtained only in the narrow range of a substrate temperature near 780°C. Among various surface treatments, the existence of a surface oxide layer and temperature rise during carbonization is proved to be effective in reproducibly obtaining single-crystalline 3C-SiC layers.
KW - Acetylene
KW - Carbonization process
KW - Gas source molecular beam epitaxy
KW - Silicon carbide
KW - Silicon surface
UR - http://www.scopus.com/inward/record.url?scp=0026172159&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0026172159&partnerID=8YFLogxK
U2 - 10.1143/JJAP.30.L1086
DO - 10.1143/JJAP.30.L1086
M3 - Article
AN - SCOPUS:0026172159
SN - 0021-4922
VL - 30
SP - L1086-L1088
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - 6
ER -