TY - JOUR
T1 - Interface stability of electrode/Bi-containing relaxor ferroelectric oxide for high-temperature operational capacitor
AU - Nagata, Takahiro
AU - Kumaragurubaran, Somu
AU - Tsunekawa, Yoshifumi
AU - Yamashita, Yoshiyuki
AU - Ueda, Shigenori
AU - Takahashi, Kenichiro
AU - Ri, Sung Gi
AU - Suzuki, Setsu
AU - Oh, Seungjun
AU - Chikyow, Toyohiro
N1 - Publisher Copyright:
© 2016 The Japan Society of Applied Physics.
PY - 2016/6
Y1 - 2016/6
N2 - The interface stability between electrodes (Pt, TaC, TiC, and RuO2) and a Bi-containing relaxor ferroelectric oxide, BaTiO3-Bi(Mg2/3Nb1/3)O3 (BT-BMN), applied to a high-temperature operational capacitor was investigated by hard X-ray photoelectron spectroscopy. All the electrodes showed electron filling at the Fermi level after annealing at 400 °C. However, Pt and TaC indicated electrical property degradations due to the thick intermediate layer formation and defect formation of the BT-BMN layer relating to the Bi diffusion into the electrodes. In contrast, TiC inhibited the Bi diffusion and did not show any change in the band alignment after annealing. Furthermore, RuO2 eliminated the defect formation in BT-BMN and showed no change in the band alignment although the Bi diffusion was also observed. These results suggest that the TiC/RuO2/BT-BMN stack structure is a potential candidate for the high-temperature operational capacitor.
AB - The interface stability between electrodes (Pt, TaC, TiC, and RuO2) and a Bi-containing relaxor ferroelectric oxide, BaTiO3-Bi(Mg2/3Nb1/3)O3 (BT-BMN), applied to a high-temperature operational capacitor was investigated by hard X-ray photoelectron spectroscopy. All the electrodes showed electron filling at the Fermi level after annealing at 400 °C. However, Pt and TaC indicated electrical property degradations due to the thick intermediate layer formation and defect formation of the BT-BMN layer relating to the Bi diffusion into the electrodes. In contrast, TiC inhibited the Bi diffusion and did not show any change in the band alignment after annealing. Furthermore, RuO2 eliminated the defect formation in BT-BMN and showed no change in the band alignment although the Bi diffusion was also observed. These results suggest that the TiC/RuO2/BT-BMN stack structure is a potential candidate for the high-temperature operational capacitor.
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U2 - 10.7567/JJAP.55.06GJ12
DO - 10.7567/JJAP.55.06GJ12
M3 - Article
AN - SCOPUS:84974625477
SN - 0021-4922
VL - 55
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - 6
M1 - 06GJ12
ER -