TY - JOUR
T1 - Interface strength of SiC/SiC composites with and without helium implantation using micro-indentation test
AU - Saito, M.
AU - Hasegawa, A.
AU - Ohtsuka, S.
AU - Abe, K.
N1 - Funding Information:
This work was supported by JUPITER program (Japan-USA Program of Irradiation Test for Fusion Research) and by Grant-in-Aid for Scientific Research (A)(2) [No. 07558067] of the Ministry of Education, Science, Sports and Culture in Japan. The authors are grateful to Dr. R.H. Jones, Pacific Northwest National Laboratory, for supplying the SiC/SiC composites, and to Dr.S. Matsuyama, Mr. R. Sakamoto and Mr. M. Fuzisawa, Fast Neutron Laboratory of Tohoku University, for operating a Dynamitron accelerator.
PY - 1998/10
Y1 - 1998/10
N2 - Helium implantation effects on interface strength of SiC/SiC composite were studied using the micro-indentation fiber push-out method. Helium implantation was carried out with an accelerator at about 400 K. Total amount of implanted helium was approximately 10 000 appm. Increase of the fiber push-in load was observed in as-implanted specimen. After post-implantation-annealing at 1673 K for 1 h, the change of the fiber push-in load by helium implantation was not observed. Effects of helium implantation on the interface are discussed.
AB - Helium implantation effects on interface strength of SiC/SiC composite were studied using the micro-indentation fiber push-out method. Helium implantation was carried out with an accelerator at about 400 K. Total amount of implanted helium was approximately 10 000 appm. Increase of the fiber push-in load was observed in as-implanted specimen. After post-implantation-annealing at 1673 K for 1 h, the change of the fiber push-in load by helium implantation was not observed. Effects of helium implantation on the interface are discussed.
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U2 - 10.1016/S0022-3115(98)00219-0
DO - 10.1016/S0022-3115(98)00219-0
M3 - Article
AN - SCOPUS:0032178950
SN - 0022-3115
VL - 258-263
SP - 1562
EP - 1566
JO - Journal of Nuclear Materials
JF - Journal of Nuclear Materials
IS - PART 2 B
ER -