Interface structure of an epitaxial iron silicide on Si(111) studied with X-Ray diffraction

Tetsuroh Shirasawa, Kouji Sekiguchi, Yusaku Iwasawa, Wolfgang Voegeli, Toshio Takahashi, Ken Hattori, Azusa N. Hattori, Hiroshi Daimon, Yusuke Wakabayashi

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6 Citations (Scopus)


Atomic structures of iron-silicide ultra-thin films epitaxial grown on Si(111) were investigated by x-ray crystaltruncation- rod scattering measurements. Two films, each of them respectively exhibited 1×1 and 2×2 periodicities in ultra high vacuum, were measured with the x-ray diffraction under ambient air. Both of the films showed essentially the same Laue peaks. The Laue peaks directly indicate that both films have the CsCl-type (so-called c-FeSi) structure whose stacking orientation is rotated by 180° with respect to the substrate. Quantitative structural analysis, which includes degree of the film roughness as fit parameters, reveals that the interfacial Fe atom is 8-fold coordinated to Si atoms (so-called B8 model). The determined interlayer spacing in the silicide film and the Fe-Si bond length at the interface are respectively ∼6 % and ∼9 % larger than those in the hypothetical c-FeSi.

Original languageEnglish
Pages (from-to)513-517
Number of pages5
Journale-Journal of Surface Science and Nanotechnology
Publication statusPublished - 2009 Apr 11


  • Diffraction
  • Iron
  • Reflection
  • Silicides
  • Single crystal epitaxy
  • X-ray scattering


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