Interfacial chemistry and structures of ultrathin Si oxynitride films

M. Oshima, K. Kimura, K. Ono, K. Horiba, K. Nakamura, H. Kumigashira, J. H. Oh, M. Niwa, K. Usuda, N. Hirashita

Research output: Contribution to journalArticlepeer-review

15 Citations (Scopus)


Ultrathin SiON films with different nitrogen profiles grown by the plasma-enhanced CVD method and the rapid thermal nitridation (RTN) of SiO 2 with an NO gas have been analyzed by high-resolution angle-resolved photoelectron spectroscopy using bright synchrotron radiation to investigate interfacial chemistry and in-depth distribution of nitrogen atoms based on the second nearest neighbor effect of N 1s chemical shift. It is found that the CVD-deposited SiON film has a three-layer structure consisting of homogeneously-distributed N atoms in the [Si-Si 3-x N x ] 3 N chemical state, N atoms in the (Si-Si 3-x O x ) 3 N chemical state of about two monolayers, and the top SiO 2 layer. In contrast, N atoms in the NO-RTN SiON film exist at the SiON/Si interface as a double layer consisting of the [Si-Si 3-x N x ] 3 N lower layer and the (Si-Si 3-x O x ) 3 N upper layer with the concentration of 3.9×10 14 and 1.7×10 14 cm -2 , respectively, based on the N 1s chemical shift of about 0.6eV.

Original languageEnglish
Pages (from-to)291-295
Number of pages5
JournalApplied Surface Science
Issue number1-4 SPEC.
Publication statusPublished - 2003 Jun 30


  • Interfacial chemistry
  • Interfacial structures
  • Photoelectron spectroscopy
  • Ultrathin Si oxynitride films


Dive into the research topics of 'Interfacial chemistry and structures of ultrathin Si oxynitride films'. Together they form a unique fingerprint.

Cite this