Interfacial electronic states of an anthracene derivative deposited on a SiO2 /Si substrate

Hiroyuki Sasaki; Yutaka Wakayama; Toyohiro Chikyow; Masaki Imamura; Akinori Tanaka; Kenji Kobayashi

doi:10.1016/j.ssc.2006.05.039

Interfacial electronic states of an anthracene derivative deposited on a SiO₂ /Si substrate

Hiroyuki Sasaki, Yutaka Wakayama, Toyohiro Chikyow, Masaki Imamura, Akinori Tanaka, Kenji Kobayashi

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The interfacial electronic states of an anthracene derivative (9,10-bis (methylthio) anthracene) on a SiO₂/Si(100) substrate were studied using ultraviolet photoelectron spectroscopy (UPS). From the UPS measurements, the work function of the sample surface was found to decrease with increasing molecular coverage in the sub-monolayer range. It is concluded that an interfacial electronic dipole (about 0.34 eV) forms at the molecule/ SiO₂ interface and decreases the effective work function.

Original language	English
Pages (from-to)	153-156
Number of pages	4
Journal	Solid State Communications
Volume	139
Issue number	4
DOIs	https://doi.org/10.1016/j.ssc.2006.05.039
Publication status	Published - 2006 Jul 1
Externally published	Yes

Keywords

A. Organic semiconductors
A. Surfaces and interfaces
D. Electronic states
E. Photoelectron spectroscopies

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Materials Chemistry

Access to Document

10.1016/j.ssc.2006.05.039

Cite this

@article{67e9e4d56e5449f58cb131c70b87ea02,

title = "Interfacial electronic states of an anthracene derivative deposited on a SiO2 /Si substrate",

abstract = "The interfacial electronic states of an anthracene derivative (9,10-bis (methylthio) anthracene) on a SiO2/Si(100) substrate were studied using ultraviolet photoelectron spectroscopy (UPS). From the UPS measurements, the work function of the sample surface was found to decrease with increasing molecular coverage in the sub-monolayer range. It is concluded that an interfacial electronic dipole (about 0.34 eV) forms at the molecule/ SiO2 interface and decreases the effective work function.",

keywords = "A. Organic semiconductors, A. Surfaces and interfaces, D. Electronic states, E. Photoelectron spectroscopies",

author = "Hiroyuki Sasaki and Yutaka Wakayama and Toyohiro Chikyow and Masaki Imamura and Akinori Tanaka and Kenji Kobayashi",

year = "2006",

month = jul,

day = "1",

doi = "10.1016/j.ssc.2006.05.039",

language = "English",

volume = "139",

pages = "153--156",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Limited",

number = "4",

}

TY - JOUR

T1 - Interfacial electronic states of an anthracene derivative deposited on a SiO2 /Si substrate

AU - Sasaki, Hiroyuki

AU - Wakayama, Yutaka

AU - Chikyow, Toyohiro

AU - Imamura, Masaki

AU - Tanaka, Akinori

AU - Kobayashi, Kenji

PY - 2006/7/1

Y1 - 2006/7/1

N2 - The interfacial electronic states of an anthracene derivative (9,10-bis (methylthio) anthracene) on a SiO2/Si(100) substrate were studied using ultraviolet photoelectron spectroscopy (UPS). From the UPS measurements, the work function of the sample surface was found to decrease with increasing molecular coverage in the sub-monolayer range. It is concluded that an interfacial electronic dipole (about 0.34 eV) forms at the molecule/ SiO2 interface and decreases the effective work function.

AB - The interfacial electronic states of an anthracene derivative (9,10-bis (methylthio) anthracene) on a SiO2/Si(100) substrate were studied using ultraviolet photoelectron spectroscopy (UPS). From the UPS measurements, the work function of the sample surface was found to decrease with increasing molecular coverage in the sub-monolayer range. It is concluded that an interfacial electronic dipole (about 0.34 eV) forms at the molecule/ SiO2 interface and decreases the effective work function.

KW - A. Organic semiconductors

KW - A. Surfaces and interfaces

KW - D. Electronic states

KW - E. Photoelectron spectroscopies

UR - http://www.scopus.com/inward/record.url?scp=33745968530&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33745968530&partnerID=8YFLogxK

U2 - 10.1016/j.ssc.2006.05.039

DO - 10.1016/j.ssc.2006.05.039

M3 - Article

AN - SCOPUS:33745968530

SN - 0038-1098

VL - 139

SP - 153

EP - 156

JO - Solid State Communications

JF - Solid State Communications

IS - 4

ER -