TY - JOUR
T1 - Interlayer charge transfer in bilayer quantum Hall states at various filling factors
AU - Muraki, K.
AU - Saku, T.
AU - Hirayama, Y.
AU - Kumada, N.
AU - Sawada, A.
AU - Ezawa, Z. F.
N1 - Funding Information:
A part of this work has been supported by NEDO joint research program (NTDP-98).
PY - 1999/10/29
Y1 - 1999/10/29
N2 - We have studied bilayer quantum Hall (QH) effects in double-quantum-well structures at various Landau-level (LL) filling factors v. The stability of various QH states are examined by varying the density balance between the two layers. We observe a remarkable v-dependent behavior; the interlayer charge transfer is allowed for particular values of v, which then repeat in a characteristic sequence with a period of 4. We employ a pseudospin picture, by which the interlayer charge transfer is expressed as a rotation of the total pseudospin. The ability or inability to accommodate the charge transfer represents the degree of pseudospin polarization in the bilayer QH state.
AB - We have studied bilayer quantum Hall (QH) effects in double-quantum-well structures at various Landau-level (LL) filling factors v. The stability of various QH states are examined by varying the density balance between the two layers. We observe a remarkable v-dependent behavior; the interlayer charge transfer is allowed for particular values of v, which then repeat in a characteristic sequence with a period of 4. We employ a pseudospin picture, by which the interlayer charge transfer is expressed as a rotation of the total pseudospin. The ability or inability to accommodate the charge transfer represents the degree of pseudospin polarization in the bilayer QH state.
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U2 - 10.1016/S0038-1098(99)00407-X
DO - 10.1016/S0038-1098(99)00407-X
M3 - Article
AN - SCOPUS:0033328668
SN - 0038-1098
VL - 112
SP - 625
EP - 629
JO - Solid State Communications
JF - Solid State Communications
IS - 11
ER -