Interlayer exchange coupling dependence of thermal stability parameters in synthetic antiferromagnetic free layers

Y. Saito; H. Sugiyama; T. Inokuchi; K. Inomata

doi:10.1063/1.2172183

Interlayer exchange coupling dependence of thermal stability parameters in synthetic antiferromagnetic free layers

Y. Saito, H. Sugiyama, T. Inokuchi, K. Inomata

Center for Innovative Integrated Electronic Systems (CIES)

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

We conducted a detailed study of the interlayer exchange coupling (JEX) dependence of thermal stability properties of magnetic tunnel junctions (MTJs) with synthetic antiferromagnetic (Syn-AF) free layers. The thermal stability properties were investigated using the junction magnetoresistance of current-perpendicular MTJ devices with a word line as probes. The observed sweep-rate-dependent coercivities were analyzed using the Sharrock formula. The results confirmed the existence of strong JEX dependence on thermal stability parameters (Ku VkT) in Syn-AF free layers. The values of Ku VkT for MTJs with Syn-AF free layers decreased with a decrease in the strength of JEX, and the increase in the effective volume of the Syn-AF free layer disappeared at JEX ≤0.52 erg cm2. The Syn-AF free layer with JEX >0.52 erg cm2 is relevant for high-density spin electronic nanodevices with a low aspect ratio.

Original language	English
Article number	08K702
Journal	Journal of Applied Physics
Volume	99
Issue number	8
DOIs	https://doi.org/10.1063/1.2172183
Publication status	Published - 2006

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title = "Interlayer exchange coupling dependence of thermal stability parameters in synthetic antiferromagnetic free layers",

abstract = "We conducted a detailed study of the interlayer exchange coupling (JEX) dependence of thermal stability properties of magnetic tunnel junctions (MTJs) with synthetic antiferromagnetic (Syn-AF) free layers. The thermal stability properties were investigated using the junction magnetoresistance of current-perpendicular MTJ devices with a word line as probes. The observed sweep-rate-dependent coercivities were analyzed using the Sharrock formula. The results confirmed the existence of strong JEX dependence on thermal stability parameters (Ku VkT) in Syn-AF free layers. The values of Ku VkT for MTJs with Syn-AF free layers decreased with a decrease in the strength of JEX, and the increase in the effective volume of the Syn-AF free layer disappeared at JEX ≤0.52 erg cm2. The Syn-AF free layer with JEX >0.52 erg cm2 is relevant for high-density spin electronic nanodevices with a low aspect ratio.",

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language = "English",

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journal = "Journal of Applied Physics",

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T1 - Interlayer exchange coupling dependence of thermal stability parameters in synthetic antiferromagnetic free layers

AU - Saito, Y.

AU - Sugiyama, H.

AU - Inokuchi, T.

AU - Inomata, K.

PY - 2006

Y1 - 2006

N2 - We conducted a detailed study of the interlayer exchange coupling (JEX) dependence of thermal stability properties of magnetic tunnel junctions (MTJs) with synthetic antiferromagnetic (Syn-AF) free layers. The thermal stability properties were investigated using the junction magnetoresistance of current-perpendicular MTJ devices with a word line as probes. The observed sweep-rate-dependent coercivities were analyzed using the Sharrock formula. The results confirmed the existence of strong JEX dependence on thermal stability parameters (Ku VkT) in Syn-AF free layers. The values of Ku VkT for MTJs with Syn-AF free layers decreased with a decrease in the strength of JEX, and the increase in the effective volume of the Syn-AF free layer disappeared at JEX ≤0.52 erg cm2. The Syn-AF free layer with JEX >0.52 erg cm2 is relevant for high-density spin electronic nanodevices with a low aspect ratio.

AB - We conducted a detailed study of the interlayer exchange coupling (JEX) dependence of thermal stability properties of magnetic tunnel junctions (MTJs) with synthetic antiferromagnetic (Syn-AF) free layers. The thermal stability properties were investigated using the junction magnetoresistance of current-perpendicular MTJ devices with a word line as probes. The observed sweep-rate-dependent coercivities were analyzed using the Sharrock formula. The results confirmed the existence of strong JEX dependence on thermal stability parameters (Ku VkT) in Syn-AF free layers. The values of Ku VkT for MTJs with Syn-AF free layers decreased with a decrease in the strength of JEX, and the increase in the effective volume of the Syn-AF free layer disappeared at JEX ≤0.52 erg cm2. The Syn-AF free layer with JEX >0.52 erg cm2 is relevant for high-density spin electronic nanodevices with a low aspect ratio.

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Interlayer exchange coupling dependence of thermal stability parameters in synthetic antiferromagnetic free layers

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