TY - JOUR
T1 - Interlayer exchange coupling dependence of thermal stability parameters in synthetic antiferromagnetic free layers
AU - Saito, Y.
AU - Sugiyama, H.
AU - Inokuchi, T.
AU - Inomata, K.
PY - 2006/8
Y1 - 2006/8
N2 - We conducted a detailed comparative study of thermal stability properties over a thermal excitation of switching of the free layer in a magnetic tunnel junction (MTJ) with Ni81Fe19, Co90Fe10, and synthetic antiferromagnetic (Syn-AF) free layers with several strengths of interlayer exchange coupling (JEX). The thermal stability properties were investigated using the junction magnetoresistance of current-perpendicular MTJ devices with a word line as probes. The observed sweep-rate-dependent coercivities were analyzed using the Sharrock formula. The results confirmed strong JEX dependence on thermal stability parameters ( Ku V / kT ) in Syn-AF free layers. The values of Ku V / kB T for MTJs with Syn-AF free layers decreased with a decrease in the strength of JEX, and the increase in the effective volume of the Syn-AF free layer disappeared at JEX {less-than or slanted equal to} 0.52 erg / cm2. The Syn-AF free layer with JEX>0.52 erg/cm2 is relevant for high-density spin electronic nanodevices with a low aspect ratio.
AB - We conducted a detailed comparative study of thermal stability properties over a thermal excitation of switching of the free layer in a magnetic tunnel junction (MTJ) with Ni81Fe19, Co90Fe10, and synthetic antiferromagnetic (Syn-AF) free layers with several strengths of interlayer exchange coupling (JEX). The thermal stability properties were investigated using the junction magnetoresistance of current-perpendicular MTJ devices with a word line as probes. The observed sweep-rate-dependent coercivities were analyzed using the Sharrock formula. The results confirmed strong JEX dependence on thermal stability parameters ( Ku V / kT ) in Syn-AF free layers. The values of Ku V / kB T for MTJs with Syn-AF free layers decreased with a decrease in the strength of JEX, and the increase in the effective volume of the Syn-AF free layer disappeared at JEX {less-than or slanted equal to} 0.52 erg / cm2. The Syn-AF free layer with JEX>0.52 erg/cm2 is relevant for high-density spin electronic nanodevices with a low aspect ratio.
KW - Interlayer exchange coupling
KW - Magnetic tunnel junctions
KW - Synthetic antiferromagnetic free layers
KW - Thermal stability parameters
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U2 - 10.1016/j.jmmm.2005.10.227
DO - 10.1016/j.jmmm.2005.10.227
M3 - Article
AN - SCOPUS:33646509884
SN - 0304-8853
VL - 303
SP - 34
EP - 38
JO - Journal of Magnetism and Magnetic Materials
JF - Journal of Magnetism and Magnetic Materials
IS - 1
ER -