TY - JOUR
T1 - Interlayer exchange in (Ga,Mn)As/(Al,Ga)As/(Ga,Mn)As semiconducting ferromagnet/nonmagnet/ferromagnet trilayer structures
AU - Akiba, N.
AU - Matsukura, F.
AU - Shen, A.
AU - Ohno, Y.
AU - Ohno, H.
AU - Oiwa, A.
AU - Katsumoto, S.
AU - Iye, Y.
PY - 1998
Y1 - 1998
N2 - Magnetic properties of all-semiconductor (Ga,Mn)As/(Al,Ga)As/(Ga,Mn)As trilayer structures are studied. The interactions between the two ferromagnetic (Ga,Mn)As layers are investigated by magnetotransport measurements in a number of samples with different GaAs thickness or with different Al content in the intermediary nonmagnetic (Al,Ga)As layer. The results indicate that carriers present in the nonmagnetic layer mediate the coupling between the two ferromagnetic layers.
AB - Magnetic properties of all-semiconductor (Ga,Mn)As/(Al,Ga)As/(Ga,Mn)As trilayer structures are studied. The interactions between the two ferromagnetic (Ga,Mn)As layers are investigated by magnetotransport measurements in a number of samples with different GaAs thickness or with different Al content in the intermediary nonmagnetic (Al,Ga)As layer. The results indicate that carriers present in the nonmagnetic layer mediate the coupling between the two ferromagnetic layers.
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U2 - 10.1063/1.122398
DO - 10.1063/1.122398
M3 - Article
AN - SCOPUS:0000937749
SN - 0003-6951
VL - 73
SP - 2122
EP - 2124
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 15
ER -