Intermixing of Ge and Si during exposure of GeH4 on Si

Gen Watari, Noritaka Usami, Yoshitaro Nose, Kozo Fujiwara, Gen Sazaki, Kazuo Nakajima

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


Exposure of GeH4 on Si was attempted at various temperatures to establish growth conditions for high-quality Ge on Si or Si-on-insulator, which could be utilized for on-chip 1.3-1.55 μm photodetectors. The grown film was found to be not pure-Ge but Ge-rich SiGe, and Si composition in the film increased with the rise of the growth temperature. This behavior could be utilized for growth of Ge on a compositionally graded SiGe buffer layer just by decreasing growth temperature. In fact, a preliminary experiment in order to obtain such a structure was successfully demonstrated by decreasing temperature from 700 to 500 °C at a rate of - 6.7 °C/min.

Original languageEnglish
Pages (from-to)163-165
Number of pages3
JournalThin Solid Films
Issue number1-2
Publication statusPublished - 2006 Jun 5


  • Gas-source molecular beam epitaxy
  • Raman spectroscopy
  • Silicon-germanium


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