Interstitial oxygen in GeSi alloys

Ichiro Yonenaga; M. Nonaka; N. Fukata

doi:10.1016/S0921-4526(01)00771-2

Interstitial oxygen in GeSi alloys

Ichiro Yonenaga, M. Nonaka, N. Fukata

Materials Design Division

Research output: Contribution to journal › Article › peer-review

32 Citations (Scopus)

Abstract

Interstitially dissolved oxygen atoms in the Czochralski-grown Ge_1-xSi_x were investigated by the infrared spectroscopy together with the analysis by the secondary ion mass spectroscopy and the X-ray fine structure. In GeSi alloys in the whole composition range 0<x<1, oxygen atoms occupy preferentially a bond-center site between Si atoms to make a Si-O-Si quasi-molecule leading to a typical 1106 cm^-1peak. The 1106 cm^-1peak shifts to low frequency side with an increase in Ge, possibly due to the expansion of Si-Si bonds.

Original language	English
Pages (from-to)	539-541
Number of pages	3
Journal	Physica B: Condensed Matter
Volume	308-310
DOIs	https://doi.org/10.1016/S0921-4526(01)00771-2
Publication status	Published - 2001 Dec 1

Keywords

Crystal growth
Germanium-silicon alloys
Infrared spectroscopy
Oxygen

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1016/S0921-4526(01)00771-2

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abstract = "Interstitially dissolved oxygen atoms in the Czochralski-grown Ge1-xSix were investigated by the infrared spectroscopy together with the analysis by the secondary ion mass spectroscopy and the X-ray fine structure. In GeSi alloys in the whole composition range 0-1peak. The 1106 cm-1peak shifts to low frequency side with an increase in Ge, possibly due to the expansion of Si-Si bonds.",

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author = "Ichiro Yonenaga and M. Nonaka and N. Fukata",

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AU - Yonenaga, Ichiro

AU - Nonaka, M.

AU - Fukata, N.

PY - 2001/12/1

Y1 - 2001/12/1

N2 - Interstitially dissolved oxygen atoms in the Czochralski-grown Ge1-xSix were investigated by the infrared spectroscopy together with the analysis by the secondary ion mass spectroscopy and the X-ray fine structure. In GeSi alloys in the whole composition range 0-1peak. The 1106 cm-1peak shifts to low frequency side with an increase in Ge, possibly due to the expansion of Si-Si bonds.

AB - Interstitially dissolved oxygen atoms in the Czochralski-grown Ge1-xSix were investigated by the infrared spectroscopy together with the analysis by the secondary ion mass spectroscopy and the X-ray fine structure. In GeSi alloys in the whole composition range 0-1peak. The 1106 cm-1peak shifts to low frequency side with an increase in Ge, possibly due to the expansion of Si-Si bonds.

KW - Crystal growth

KW - Germanium-silicon alloys

KW - Infrared spectroscopy

KW - Oxygen

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DO - 10.1016/S0921-4526(01)00771-2

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SP - 539

EP - 541

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

ER -

Interstitial oxygen in GeSi alloys

Abstract

Keywords

ASJC Scopus subject areas

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