TY - JOUR
T1 - Intersubband optical transitions in ZnO-based quantum wells grown by plasma-assisted molecular beam epitaxy
AU - Ohtani, K.
AU - Belmoubarik, M.
AU - Ohno, H.
N1 - Funding Information:
The authors thank Prof. M. Kawasaki, Dr. A. Ohtomo, and Dr. A. Tsukazaki at Institute for Material Research, Tohoku University, for fruitful discussions and encouragement. This work was supported by Grant-in-Aid for Scientific Research (A) (no. 19206033) from Japan Society for the Promotion of Science (JSPS).
Copyright:
Copyright 2009 Elsevier B.V., All rights reserved.
PY - 2009/3/15
Y1 - 2009/3/15
N2 - Intersubband optical transitions in ZnO-based quantum wells grown by plasma-assisted molecular beam epitaxy are investigated by a photocurrent spectroscopy. ZnO/MgZnO multiple quantum well (MQW) structures containing different ZnO well thicknesses are prepared. Photocurrent peaks are observed when the polarization of incident light is TM mode, following the intersubband selection rule. On reducing the ZnO well thickness, photocurrent peaks shifted to higher energies. Calculation indicates that the photocurrent peaks are due to intersubband transitions from the first to the third subband in ZnO/MgZnO MQWs. Comparison between experiment and calculation allows us to estimate the band offset ratio.
AB - Intersubband optical transitions in ZnO-based quantum wells grown by plasma-assisted molecular beam epitaxy are investigated by a photocurrent spectroscopy. ZnO/MgZnO multiple quantum well (MQW) structures containing different ZnO well thicknesses are prepared. Photocurrent peaks are observed when the polarization of incident light is TM mode, following the intersubband selection rule. On reducing the ZnO well thickness, photocurrent peaks shifted to higher energies. Calculation indicates that the photocurrent peaks are due to intersubband transitions from the first to the third subband in ZnO/MgZnO MQWs. Comparison between experiment and calculation allows us to estimate the band offset ratio.
KW - A3. Molecular Beam Epitaxy
KW - A3. Quantum well
KW - B1. Oxides
KW - B2. Semiconducting II-VI materials
KW - B3. Heterojunction semiconductor devices
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U2 - 10.1016/j.jcrysgro.2008.09.134
DO - 10.1016/j.jcrysgro.2008.09.134
M3 - Article
AN - SCOPUS:63349097461
SN - 0022-0248
VL - 311
SP - 2176
EP - 2178
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 7
ER -