Intrinsic high electrical conductivity of stoichiometric SrNb O3 epitaxial thin films

Daichi Oka, Yasushi Hirose, Shoichiro Nakao, Tomoteru Fukumura, Tetsuya Hasegawa

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52 Citations (Scopus)


SrVO3 and SrNbO3 are perovskite-type transition-metal oxides with the same d1 electronic configuration. Although SrNbO3 (4d1) has a larger d orbital than SrVO3 (3d1), the reported electrical resistivity of SrNbO3 is much higher than that of SrVO3, probably owing to nonstoichiometry. In this paper, we grew epitaxial, high-conductivity stoichiometric SrNbO3 using pulsed laser deposition. The growth temperature strongly affected the Sr/Nb ratio and the oxygen content of the films, and we obtained stoichiometric SrNbO3 at a very narrow temperature window around 630 °C. The stoichiometric SrNbO3 epitaxial thin films grew coherently on KTaO3 (001) substrates with high crystallinity. The room-temperature resistivity of the stoichiometric film was 2.82×10-5Ωcm, one order of magnitude lower than the lowest reported value of SrNbO3 and comparable with that of SrVO3. We observed a T-square dependence of resistivity below T∗=180K and non-Drude behavior in near-infrared absorption spectroscopy, attributable to the Fermi-liquid nature caused by electron correlation. Analysis of the T-square coefficient A of resistivity experimentally revealed that the 4d orbital of Nb that is larger than the 3d ones certainly contributes to the high electrical conduction of SrNbO3.

Original languageEnglish
Article number205102
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number20
Publication statusPublished - 2015 Nov 2


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