TY - JOUR
T1 - Introduction of defects into HfO2 gate dielectrics by metal-gate deposition studied using x-ray photoelectron spectroscopy and positron annihilation
AU - Uedono, A.
AU - Naito, T.
AU - Otsuka, T.
AU - Shiraishi, K.
AU - Yamabe, K.
AU - Miyazaki, S.
AU - Watanabe, H.
AU - Umezawa, N.
AU - Chikyow, T.
AU - Akasaka, Y.
AU - Kamiyama, S.
AU - Nara, Y.
AU - Yamada, K.
N1 - Funding Information:
One of the authors (A.U.) thanks Professor K. Natori and Dr. T. Kurusu (University of Tsukuba) for their assistance regarding the device simulations. Part of this study was financially supported by the Budget for Nuclear Research of the Ministry of Education, Culture, Sports, Science and Technology, based on screening and counseling by the Atomic Energy Commission.
PY - 2006
Y1 - 2006
N2 - The impact of TiN deposition on thin HfO2 films formed on Si substrates was studied using x-ray photoelectron spectroscopy and a monoenergetic positron beam. For the predeposition sample, the positrons implanted into Si were found to diffuse toward the HfO2/Si interface under the influence of the electric field, suggesting the presence of negative charges in HfO2. After TiN was deposited by chemical vapor deposition, no large change in the defect species was observed. After TiN was deposited by physical vapor deposition, however, positive charges were introduced at the TiN/HfO2 interface, which were associated with the incorporation of nitride into HfO2 and/or the plasma damage at the surface of HfO2, and the resultant formation of positively charged oxygen vacancies.
AB - The impact of TiN deposition on thin HfO2 films formed on Si substrates was studied using x-ray photoelectron spectroscopy and a monoenergetic positron beam. For the predeposition sample, the positrons implanted into Si were found to diffuse toward the HfO2/Si interface under the influence of the electric field, suggesting the presence of negative charges in HfO2. After TiN was deposited by chemical vapor deposition, no large change in the defect species was observed. After TiN was deposited by physical vapor deposition, however, positive charges were introduced at the TiN/HfO2 interface, which were associated with the incorporation of nitride into HfO2 and/or the plasma damage at the surface of HfO2, and the resultant formation of positively charged oxygen vacancies.
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U2 - 10.1063/1.2345618
DO - 10.1063/1.2345618
M3 - Article
AN - SCOPUS:33749323026
SN - 0021-8979
VL - 100
JO - Journal of Applied Physics
JF - Journal of Applied Physics
IS - 6
M1 - 064501
ER -