Inverse-photoemission study of hole-concentration dependence of the electronic structure in Bi2Sr2Ca1-xYxCu2O8 (x=0.00.05)

T. Watanabe; T. Takahashi; S. Suzuki; S. Sato; H. Katayama-Yoshida

doi:10.1103/PhysRevB.44.5316

Inverse-photoemission study of hole-concentration dependence of the electronic structure in Bi2Sr2Ca1-xYxCu2O8 (x=0.00.05)

T. Watanabe, T. Takahashi, S. Suzuki, S. Sato, H. Katayama-Yoshida

SCI - Physics

Tohoku University

Research output: Contribution to journal › Article › peer-review

24 Citations (Scopus)

Abstract

Inverse-photoemission spectroscopy has been performed on Bi2Sr2Ca1-xYxCu2O8 ceramics, where hole concentration is controlled by the atomic ratio between divalent Ca and trivalent Y atoms. It was found that hole doping does not cause a rigid shift of the density of states relative to the Fermi level, but creates additional electronic states in the vicinity of the Fermi level.

Original language	English
Pages (from-to)	5316-5317
Number of pages	2
Journal	Physical Review B
Volume	44
Issue number	10
DOIs	https://doi.org/10.1103/PhysRevB.44.5316
Publication status	Published - 1991

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10.1103/PhysRevB.44.5316

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AU - Sato, S.

AU - Katayama-Yoshida, H.

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AB - Inverse-photoemission spectroscopy has been performed on Bi2Sr2Ca1-xYxCu2O8 ceramics, where hole concentration is controlled by the atomic ratio between divalent Ca and trivalent Y atoms. It was found that hole doping does not cause a rigid shift of the density of states relative to the Fermi level, but creates additional electronic states in the vicinity of the Fermi level.

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Inverse-photoemission study of hole-concentration dependence of the electronic structure in Bi2Sr2Ca1-xYxCu2O8 (x=0.00.05)

Abstract

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