Investigation of a Tb-doped HfO2 single crystal grown by a skull melting method

Shunsuke Kurosawa; Yoshisuke Futami; Vladimir V. Kochurikhin; Mikhail A. Borik; Yuui Yokota; Takayuki Yanagida; Akira Yoshikawa

doi:10.4028/www.scientific.net/KEM.508.81

Investigation of a Tb-doped HfO₂ single crystal grown by a skull melting method

Shunsuke Kurosawa, Yoshisuke Futami, Vladimir V. Kochurikhin, Mikhail A. Borik, Yuui Yokota, Takayuki Yanagida, Akira Yoshikawa

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

5 Citations (Scopus)

Abstract

HfO₂ has high effective atomic number and no radioactive-isotope as the background source, and it can be the candidate for the high-stopping scintillator instead of Lu₂SiO₅:Ce scintillator used in medical imaging, astronomy and etc. However, HfO₂ has an extremely high melting point of 2774 °C, and it is difficult to grow the crystal from the melt using crucible, as there is no suitable metals, which can survive around that temperature. Thus, Czochralski, Bridgman, and micro-pulling down method cannot be applied. Therefore we investigated optical properties of a 17-mol% b-doped (stabilized) HfO₂ crystal grown by the skull melting method, and this crystal had a high refractive index of 2.5 at 550 nm, and the maximum emission peak at ∼550 nm from ⁵D₄ excited states of Tb³⁺. In addition, we found the radiation reaction of the crystal irradiated with alpha and gamma rays measuring with a photomultiplier.

Original language	English
Title of host publication	Materials Integration
Publisher	Trans Tech Publications Ltd
Pages	81-86
Number of pages	6
ISBN (Print)	9783037853764
DOIs	https://doi.org/10.4028/www.scientific.net/KEM.508.81
Publication status	Published - 2012
Event	Int. Symposium of GCOE: Materials Integration, in Conjunction with the 2nd Int. Symposium on Advanced Synthesis and Processing Technology for Materials, ASPT 2011 and the 8th Materials Science School for Young Scientists, KINKEN-WAKATE 2011 - Sendai, Japan Duration: 2011 Dec 1 → 2011 Dec 2

Publication series

Name	Key Engineering Materials
Volume	508
ISSN (Print)	1013-9826
ISSN (Electronic)	1662-9795

Other

Other	Int. Symposium of GCOE: Materials Integration, in Conjunction with the 2nd Int. Symposium on Advanced Synthesis and Processing Technology for Materials, ASPT 2011 and the 8th Materials Science School for Young Scientists, KINKEN-WAKATE 2011
Country/Territory	Japan
City	Sendai
Period	11/12/1 → 11/12/2

Keywords

High melting temperature materials
Single crystal growth
Skull melting method

ASJC Scopus subject areas

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

Access to Document

10.4028/www.scientific.net/KEM.508.81

Cite this

Kurosawa, S, Futami, Y, Kochurikhin, VV, Borik, MA, Yokota, Y, Yanagida, T & Yoshikawa, A 2012, Investigation of a Tb-doped HfO₂ single crystal grown by a skull melting method. in Materials Integration. Key Engineering Materials, vol. 508, Trans Tech Publications Ltd, pp. 81-86, Int. Symposium of GCOE: Materials Integration, in Conjunction with the 2nd Int. Symposium on Advanced Synthesis and Processing Technology for Materials, ASPT 2011 and the 8th Materials Science School for Young Scientists, KINKEN-WAKATE 2011, Sendai, Japan, 11/12/1. https://doi.org/10.4028/www.scientific.net/KEM.508.81

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title = "Investigation of a Tb-doped HfO2 single crystal grown by a skull melting method",

abstract = "HfO2 has high effective atomic number and no radioactive-isotope as the background source, and it can be the candidate for the high-stopping scintillator instead of Lu2SiO5:Ce scintillator used in medical imaging, astronomy and etc. However, HfO2 has an extremely high melting point of 2774 °C, and it is difficult to grow the crystal from the melt using crucible, as there is no suitable metals, which can survive around that temperature. Thus, Czochralski, Bridgman, and micro-pulling down method cannot be applied. Therefore we investigated optical properties of a 17-mol% b-doped (stabilized) HfO2 crystal grown by the skull melting method, and this crystal had a high refractive index of 2.5 at 550 nm, and the maximum emission peak at ∼550 nm from 5D4 excited states of Tb3+. In addition, we found the radiation reaction of the crystal irradiated with alpha and gamma rays measuring with a photomultiplier.",

keywords = "High melting temperature materials, Single crystal growth, Skull melting method",

author = "Shunsuke Kurosawa and Yoshisuke Futami and Kochurikhin, {Vladimir V.} and Borik, {Mikhail A.} and Yuui Yokota and Takayuki Yanagida and Akira Yoshikawa",

note = "Copyright: Copyright 2020 Elsevier B.V., All rights reserved.; Int. Symposium of GCOE: Materials Integration, in Conjunction with the 2nd Int. Symposium on Advanced Synthesis and Processing Technology for Materials, ASPT 2011 and the 8th Materials Science School for Young Scientists, KINKEN-WAKATE 2011 ; Conference date: 01-12-2011 Through 02-12-2011",

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doi = "10.4028/www.scientific.net/KEM.508.81",

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AU - Kurosawa, Shunsuke

AU - Futami, Yoshisuke

AU - Kochurikhin, Vladimir V.

AU - Borik, Mikhail A.

AU - Yokota, Yuui

AU - Yanagida, Takayuki

AU - Yoshikawa, Akira

PY - 2012

Y1 - 2012

N2 - HfO2 has high effective atomic number and no radioactive-isotope as the background source, and it can be the candidate for the high-stopping scintillator instead of Lu2SiO5:Ce scintillator used in medical imaging, astronomy and etc. However, HfO2 has an extremely high melting point of 2774 °C, and it is difficult to grow the crystal from the melt using crucible, as there is no suitable metals, which can survive around that temperature. Thus, Czochralski, Bridgman, and micro-pulling down method cannot be applied. Therefore we investigated optical properties of a 17-mol% b-doped (stabilized) HfO2 crystal grown by the skull melting method, and this crystal had a high refractive index of 2.5 at 550 nm, and the maximum emission peak at ∼550 nm from 5D4 excited states of Tb3+. In addition, we found the radiation reaction of the crystal irradiated with alpha and gamma rays measuring with a photomultiplier.

AB - HfO2 has high effective atomic number and no radioactive-isotope as the background source, and it can be the candidate for the high-stopping scintillator instead of Lu2SiO5:Ce scintillator used in medical imaging, astronomy and etc. However, HfO2 has an extremely high melting point of 2774 °C, and it is difficult to grow the crystal from the melt using crucible, as there is no suitable metals, which can survive around that temperature. Thus, Czochralski, Bridgman, and micro-pulling down method cannot be applied. Therefore we investigated optical properties of a 17-mol% b-doped (stabilized) HfO2 crystal grown by the skull melting method, and this crystal had a high refractive index of 2.5 at 550 nm, and the maximum emission peak at ∼550 nm from 5D4 excited states of Tb3+. In addition, we found the radiation reaction of the crystal irradiated with alpha and gamma rays measuring with a photomultiplier.

KW - High melting temperature materials

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KW - Skull melting method

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