Investigation of an erasing method for synaptic behaviour in a phase change device using Ge1Cu2Te3 (GCT)

J. S. An; C. M. Choi; Y. Shindo; Y. Sutou; H. S. Jeong; Y. H. Song

doi:10.1049/el.2016.2211

Investigation of an erasing method for synaptic behaviour in a phase change device using Ge₁Cu₂Te₃ (GCT)

J. S. An, C. M. Choi, Y. Shindo, Y. Sutou, H. S. Jeong, Y. H. Song

ENG - Materials Science

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

The gradual erasing operation from reset state to set state adjusting pulse amplitude, duration time and falling time respectively in phase change device using Ge₁Cu₂Te₃ is investigated. For this procedure, a relatively high voltage and increased falling time, which was able to produce both long-term potential and long-term depression in the time interval between pre-spike and post-spike is choosing. The results suggested that the presence of synaptic behaviour was due to controlled falling time rather than pulse amplitude.

Original language	English
Pages (from-to)	1514-1516
Number of pages	3
Journal	Electronics Letters
Volume	52
Issue number	18
DOIs	https://doi.org/10.1049/el.2016.2211
Publication status	Published - 2016 Sept 2

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abstract = "The gradual erasing operation from reset state to set state adjusting pulse amplitude, duration time and falling time respectively in phase change device using Ge1Cu2Te3 is investigated. For this procedure, a relatively high voltage and increased falling time, which was able to produce both long-term potential and long-term depression in the time interval between pre-spike and post-spike is choosing. The results suggested that the presence of synaptic behaviour was due to controlled falling time rather than pulse amplitude.",

author = "An, {J. S.} and Choi, {C. M.} and Y. Shindo and Y. Sutou and Jeong, {H. S.} and Song, {Y. H.}",

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AU - An, J. S.

AU - Choi, C. M.

AU - Shindo, Y.

AU - Sutou, Y.

AU - Jeong, H. S.

AU - Song, Y. H.

N1 - Publisher Copyright: © The Institution of Engineering and Technology 2016.

PY - 2016/9/2

Y1 - 2016/9/2

N2 - The gradual erasing operation from reset state to set state adjusting pulse amplitude, duration time and falling time respectively in phase change device using Ge1Cu2Te3 is investigated. For this procedure, a relatively high voltage and increased falling time, which was able to produce both long-term potential and long-term depression in the time interval between pre-spike and post-spike is choosing. The results suggested that the presence of synaptic behaviour was due to controlled falling time rather than pulse amplitude.

AB - The gradual erasing operation from reset state to set state adjusting pulse amplitude, duration time and falling time respectively in phase change device using Ge1Cu2Te3 is investigated. For this procedure, a relatively high voltage and increased falling time, which was able to produce both long-term potential and long-term depression in the time interval between pre-spike and post-spike is choosing. The results suggested that the presence of synaptic behaviour was due to controlled falling time rather than pulse amplitude.

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Investigation of an erasing method for synaptic behaviour in a phase change device using Ge₁Cu₂Te₃ (GCT)

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