Investigation of complex channel capacitance in C60 field effect transistor and evaluation of the effect of grain boundaries

Tetsuhiko Miyadera; Manabu Nakayama; Susumu Ikeda; Koichiro Saiki

doi:10.1016/j.cap.2006.01.054

Investigation of complex channel capacitance in C₆₀ field effect transistor and evaluation of the effect of grain boundaries

Tetsuhiko Miyadera, Manabu Nakayama, Susumu Ikeda, Koichiro Saiki

Advanced Institute for Materials Research (AIMR)

The University of Tokyo

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

Frequency and gate voltage dependences of capacitance in a C₆₀ field effect transistor (FET) showed an intriguing power law (C ∝ f^-p, p ∼ 0.3-0.35) irrespective of the gate voltage. In order to interpret this phenomenon, we formulated a complex impedance of the bottom contact FET based on a distributed constant circuit model in cases of both a single grain channel and a multi-grain channel. The power law could be well explained in terms of the complex impedance formula using only a small number of fitting parameters, the results of which indicate the validity of the model. This kind of analysis could usefully characterize the organic FETs consisting of grain boundaries, providing information on the resistance ratio of the grain interior to the grain boundary.

Original language	English
Pages (from-to)	87-91
Number of pages	5
Journal	Current Applied Physics
Volume	7
Issue number	1
DOIs	https://doi.org/10.1016/j.cap.2006.01.054
Publication status	Published - 2007 Jan

Keywords

C
Capacitance
FET
Impedance
Organic film

Access to Document

10.1016/j.cap.2006.01.054

Cite this

@article{9f5e5d39d87a46b3b6e33ef0371f17c6,

title = "Investigation of complex channel capacitance in C60 field effect transistor and evaluation of the effect of grain boundaries",

abstract = "Frequency and gate voltage dependences of capacitance in a C60 field effect transistor (FET) showed an intriguing power law (C ∝ f-p, p ∼ 0.3-0.35) irrespective of the gate voltage. In order to interpret this phenomenon, we formulated a complex impedance of the bottom contact FET based on a distributed constant circuit model in cases of both a single grain channel and a multi-grain channel. The power law could be well explained in terms of the complex impedance formula using only a small number of fitting parameters, the results of which indicate the validity of the model. This kind of analysis could usefully characterize the organic FETs consisting of grain boundaries, providing information on the resistance ratio of the grain interior to the grain boundary.",

keywords = "C, Capacitance, FET, Impedance, Organic film",

author = "Tetsuhiko Miyadera and Manabu Nakayama and Susumu Ikeda and Koichiro Saiki",

note = "Funding Information: We would like to thank Prof. T. Shibata for his helpful discussions. This research was supported by a Grant-in-Aid for Scientific Research from the Ministry of Education, Culture, Sports, Science and Technology, Japan (14GS0207).",

year = "2007",

month = jan,

doi = "10.1016/j.cap.2006.01.054",

language = "English",

volume = "7",

pages = "87--91",

journal = "Current Applied Physics",

issn = "1567-1739",

publisher = "Elsevier",

number = "1",

}

TY - JOUR

T1 - Investigation of complex channel capacitance in C60 field effect transistor and evaluation of the effect of grain boundaries

AU - Miyadera, Tetsuhiko

AU - Nakayama, Manabu

AU - Ikeda, Susumu

AU - Saiki, Koichiro

N1 - Funding Information: We would like to thank Prof. T. Shibata for his helpful discussions. This research was supported by a Grant-in-Aid for Scientific Research from the Ministry of Education, Culture, Sports, Science and Technology, Japan (14GS0207).

PY - 2007/1

Y1 - 2007/1

N2 - Frequency and gate voltage dependences of capacitance in a C60 field effect transistor (FET) showed an intriguing power law (C ∝ f-p, p ∼ 0.3-0.35) irrespective of the gate voltage. In order to interpret this phenomenon, we formulated a complex impedance of the bottom contact FET based on a distributed constant circuit model in cases of both a single grain channel and a multi-grain channel. The power law could be well explained in terms of the complex impedance formula using only a small number of fitting parameters, the results of which indicate the validity of the model. This kind of analysis could usefully characterize the organic FETs consisting of grain boundaries, providing information on the resistance ratio of the grain interior to the grain boundary.

AB - Frequency and gate voltage dependences of capacitance in a C60 field effect transistor (FET) showed an intriguing power law (C ∝ f-p, p ∼ 0.3-0.35) irrespective of the gate voltage. In order to interpret this phenomenon, we formulated a complex impedance of the bottom contact FET based on a distributed constant circuit model in cases of both a single grain channel and a multi-grain channel. The power law could be well explained in terms of the complex impedance formula using only a small number of fitting parameters, the results of which indicate the validity of the model. This kind of analysis could usefully characterize the organic FETs consisting of grain boundaries, providing information on the resistance ratio of the grain interior to the grain boundary.

KW - C

KW - Capacitance

KW - FET

KW - Impedance

KW - Organic film

UR - http://www.scopus.com/inward/record.url?scp=33749315470&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33749315470&partnerID=8YFLogxK

U2 - 10.1016/j.cap.2006.01.054

DO - 10.1016/j.cap.2006.01.054

M3 - Article

AN - SCOPUS:33749315470

SN - 1567-1739

VL - 7

SP - 87

EP - 91

JO - Current Applied Physics

JF - Current Applied Physics

IS - 1

ER -

Investigation of complex channel capacitance in C₆₀ field effect transistor and evaluation of the effect of grain boundaries

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this