Investigation of crystal growth behavior of silicon melt for growing high quality polycrystalline silicon by cast method

Kozo Fujiwara; Noritaka Usami; Yoshitaro Nose; Gen Sazaki; Kazuo Nakajima

Investigation of crystal growth behavior of silicon melt for growing high quality polycrystalline silicon by cast method

Kozo Fujiwara, Noritaka Usami, Yoshitaro Nose, Gen Sazaki, Kazuo Nakajima

Collaborative Research Center on Energy Materials

Research output: Contribution to journal › Conference article › peer-review

Abstract

We investigated crystal growth behaviors of silicon melt by using an in-situ monitoring system consisting of a furnace and a microscope. Morphology of solid/liquid interface and directional growth processes of polycrystalline silicon were directly observed. We found two kinds of grain expanding mechanisms. It is suggested that we can control a dominant orientation on a wafer surface of polycrystalline silicon by controlling those two mechanisms during casting method.

Original language	English
Pages (from-to)	1081-1083
Number of pages	3
Journal	Conference Record of the IEEE Photovoltaic Specialists Conference
Publication status	Published - 2005 Nov 30
Event	31st IEEE Photovoltaic Specialists Conference - 2005 - Lake Buena Vista, FL, United States Duration: 2005 Jan 3 → 2005 Jan 7

ASJC Scopus subject areas

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

Cite this

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title = "Investigation of crystal growth behavior of silicon melt for growing high quality polycrystalline silicon by cast method",

abstract = "We investigated crystal growth behaviors of silicon melt by using an in-situ monitoring system consisting of a furnace and a microscope. Morphology of solid/liquid interface and directional growth processes of polycrystalline silicon were directly observed. We found two kinds of grain expanding mechanisms. It is suggested that we can control a dominant orientation on a wafer surface of polycrystalline silicon by controlling those two mechanisms during casting method.",

author = "Kozo Fujiwara and Noritaka Usami and Yoshitaro Nose and Gen Sazaki and Kazuo Nakajima",

year = "2005",

month = nov,

day = "30",

language = "English",

pages = "1081--1083",

journal = "Conference Record of the IEEE Photovoltaic Specialists Conference",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "31st IEEE Photovoltaic Specialists Conference - 2005 ; Conference date: 03-01-2005 Through 07-01-2005",

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TY - JOUR

T1 - Investigation of crystal growth behavior of silicon melt for growing high quality polycrystalline silicon by cast method

AU - Fujiwara, Kozo

AU - Usami, Noritaka

AU - Nose, Yoshitaro

AU - Sazaki, Gen

AU - Nakajima, Kazuo

PY - 2005/11/30

Y1 - 2005/11/30

N2 - We investigated crystal growth behaviors of silicon melt by using an in-situ monitoring system consisting of a furnace and a microscope. Morphology of solid/liquid interface and directional growth processes of polycrystalline silicon were directly observed. We found two kinds of grain expanding mechanisms. It is suggested that we can control a dominant orientation on a wafer surface of polycrystalline silicon by controlling those two mechanisms during casting method.

AB - We investigated crystal growth behaviors of silicon melt by using an in-situ monitoring system consisting of a furnace and a microscope. Morphology of solid/liquid interface and directional growth processes of polycrystalline silicon were directly observed. We found two kinds of grain expanding mechanisms. It is suggested that we can control a dominant orientation on a wafer surface of polycrystalline silicon by controlling those two mechanisms during casting method.

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M3 - Conference article

AN - SCOPUS:27944453613

SN - 0160-8371

SP - 1081

EP - 1083

JO - Conference Record of the IEEE Photovoltaic Specialists Conference

JF - Conference Record of the IEEE Photovoltaic Specialists Conference

T2 - 31st IEEE Photovoltaic Specialists Conference - 2005

Y2 - 3 January 2005 through 7 January 2005

ER -

Investigation of crystal growth behavior of silicon melt for growing high quality polycrystalline silicon by cast method

Abstract

ASJC Scopus subject areas

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