Investigation of degradation in homoepitaxially grown ZnCdSe/ZnSe light emitting diode

Tetsuichiro Ohno, Akira Ohki, Takashi Matsuoka

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12 Citations (Scopus)


From the transmission electron microscope (TEM) observation of ZnSe homoepitaxial films, it is clarified that the major pre-existing defects in the film are Shockley extended dislocations. Correlation between the etch pits and the Shockley extended dislocations are also confirmed. The degradation mode of a ZnCdSe/ZnSe homoepitaxial light emitting diode (LED) is discussed on the basis of the microscopic observation. Many dark spot defects (DSDs) are observed in the emission pattern just after turn-on, and they enlarge and become pronounced keeping their round shape. The growth velocity of the DSD is less than 0.056 μm/min for the current density of 408 A/cm2. The DSD density is almost the same as the etch pit density (EPD) of the as-grown LED wafer.

Original languageEnglish
Pages (from-to)L190-L193
JournalJapanese Journal of Applied Physics
Issue number2 SUPPL. B
Publication statusPublished - 1997 Feb 15


  • Dark spot
  • Degradation
  • Etch pit
  • Homoepitaxy
  • Light emitting diode
  • Transmission electron microscope
  • ZnSe


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