TY - JOUR
T1 - Investigation of direct and indirect band gaps of [100]-oriented nearly strain-free β-FeSi2 films grown by molecular-beam epitaxy
AU - Takakura, Ken Ichiro
AU - Hiroi, Noriyoshi
AU - Suemasu, Takashi
AU - Chichibu, Shigefusa F.
AU - Hasegawa, Fumio
N1 - Copyright:
Copyright 2011 Elsevier B.V., All rights reserved.
PY - 2002/1/28
Y1 - 2002/1/28
N2 - Optical absorption (OA) spectra of [100]-oriented, nearly strain-free β-FeSi2 continuous films grown by molecular-beam epitaxy were investigated. Although the film is a multidomain epilayer, the OA spectra of the annealed film were fitted well by the sum of the contributions from both direct and indirect absorption transitions for a wide range of temperatures from 77 to 300 K. The indirect absorption edge of 0.78 eV obtained at 77 K agreed with the effective band gap energy obtained from temperature dependence of the carrier density.
AB - Optical absorption (OA) spectra of [100]-oriented, nearly strain-free β-FeSi2 continuous films grown by molecular-beam epitaxy were investigated. Although the film is a multidomain epilayer, the OA spectra of the annealed film were fitted well by the sum of the contributions from both direct and indirect absorption transitions for a wide range of temperatures from 77 to 300 K. The indirect absorption edge of 0.78 eV obtained at 77 K agreed with the effective band gap energy obtained from temperature dependence of the carrier density.
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U2 - 10.1063/1.1432755
DO - 10.1063/1.1432755
M3 - Article
AN - SCOPUS:79955998261
SN - 0003-6951
VL - 80
SP - 556
EP - 558
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 4
ER -