Investigation of formation processes of an anodic porous alumina film on a silicon substrate

Hirokazu Shiraki, Yasuo Kimura, Hisao Ishii, Sachiko Ono, Kingo Itaya, Michio Niwano

Research output: Contribution to journalArticlepeer-review

18 Citations (Scopus)


We investigated formation processes of a porous anodic alumina film on a p-type silicon (Si) substrate using infrared absorption spectroscopy in the multiple internal reflection geometry (MIR-IRAS). We observed drastic IR spectral changes when anodization took place near the interface between an aluminum (Al) layer and a Si substrate. The intensity of absorption peaks due to porous anodic alumina increased with a decrease in anodic current density and it decreased simultaneously with formation of silicon oxides (SiO 2 ) at the interface between a porous anodic porous alumina film and a Si substrate after appearance of a spike of anodic current density which indicated changes of states of electric double layer at the interface between an electrolyte and an electrode due to contact between an electrolyte and a Si substrate. The results suggested that the formation of SiO 2 nanodots on a Si substrate promoted penetration of electrolytes to peel the porous anodic alumina film from it.

Original languageEnglish
Pages (from-to)369-373
Number of pages5
JournalApplied Surface Science
Issue number1-4
Publication statusPublished - 2004 Oct 15


  • Anodization
  • Electrochemistry
  • Infrared absorption spectroscopy
  • Liquid-solid interface
  • Nanostructure
  • Porous alumina

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


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