Abstract
High-field magnetospectroscopy measurements on HgSe/HgSe: Fe quantum wells and superlattices are reported. Fe2+ substitution of Hg2+ manifests itself in a donor about 210 meV above the conduction band edge and thus for sufficiently high carrier concentration as a Fermi level pinned system in the mixed valence regime. The MBE-grown samples on ZnTe/GaAs substrates exhibit 2D effects for characteristic well or superlattice dimensions < 20 nm. Strong anisotropy effects due to strain are observed. By variation of the size quantization the predicted transition from a 2D to 3D QHE for Fermi level pinned systems is demonstrated.
Original language | English |
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Pages (from-to) | 384-387 |
Number of pages | 4 |
Journal | Physica B: Condensed Matter |
Volume | 216 |
Issue number | 3-4 |
DOIs | |
Publication status | Published - 1996 Jan 1 |