Abstract
We have studied the surfactant effect of Sn on ZnSe(0 0 1) growth by molecular beam epitaxy equipped with in-situ reflection high-energy electron diffraction and reflectance difference spectroscopy and in-line Auger electron spectroscopy. Sn deposited on the Zn stabilized c(2 ×2) ZnSe surface showed surface segregation, while Sn deposited on the Se-stabilized (2×1) surface does not segregate to the growing surface. We have demonstrated that Sn deposited on the Zn stabilized ZnSe surface improve two-dimensional growth in highly strained CdSe/ZnSe system.
Original language | English |
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Pages (from-to) | 223-227 |
Number of pages | 5 |
Journal | Journal of Crystal Growth |
Volume | 184-185 |
DOIs | |
Publication status | Published - 1998 |
Keywords
- MBE
- Quantum structure
- RDS
- RHEED
- Surfactant
- ZnSe