Investigation of the TiN gate electrode with tunable work function and its application for FinFET fabrication

Yongxun Liu, Shinya Kijima, Etsuro Sugimata, Meishoku Masahara, Kazuhiko Endo, Takashi Matsukawa, Kenichi Ishii, Kunihiro Sakamoto, Toshihiro Sekigawa, Hiromi Yamauchi, Yoshifumi Takanashi, Eiichi Suzuki

Research output: Contribution to journalArticlepeer-review

105 Citations (Scopus)


The titanium nitride (TiN) gate electrode with a tunable work function has successfully been deposited on the sidewalls of upstanding Si-fin channels of FinFETs by using a conventional reactive sputtering. It was found that the work function of the TiN (φTiN) slightly decreases with increasing nitrogen (N2) gas flow ratio, RN = N2/(Ar + N2) in the sputtering, from 17% to 100%. The experimental threshold voltage (Vth) dependence on the RN shows that the more RN offers the lower Vth for the TiN gate n-channel FinFETs. The composition analysis of the TiN films with different RN showed that the more amount of nitrogen is introduced into the TiN films with increasing RN, which suggests that the lowering of φTiN with increasing RN should be related to the increase in nitrogen concentration in the TiN film. The desirable Vth shift from -0.22 to 0.22 V was experimentally confirmed by fabricating n + poly-Si and TiN gate n-channel multi-FinFETs without a channel doping. The developed simple technique for the conformal TiN deposition on the sidewalls of Si-fin channels is very attractive to the TiN gate FinFET fabrication.

Original languageEnglish
Pages (from-to)723-728
Number of pages6
JournalIEEE Transactions on Nanotechnology
Issue number6
Publication statusPublished - 2006 Nov


  • Double-gate MOSFET
  • FinFET
  • Metal gate
  • TiN-gate
  • Work function


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