TY - GEN
T1 - Investigation of the Underfill with Negative-Thermal-Expansion Material to Suppress Mechanical Stress in 3D Integration System
AU - Kino, Hisashi
AU - Fukushima, Takafumi
AU - Tanaka, Tetsu
N1 - Funding Information:
ACKNOWLEDGMENT We acknowledge Kojundo Chemical Laboratory Co., Ltd., for their negative-CTE material. This work was supported by the Frontier Research Institute for Interdisciplinary Sciences (FRIS) Tohoku University. The work is also supported by the VLSI Design and Education Center (VDEC), the University of Tokyo, in collaboration with Cadence Design Systems. This work was performed in the Micro/Nano-Machining Research and Education Center at Tohoku University.
Publisher Copyright:
© 2019 IEEE.
PY - 2019/10
Y1 - 2019/10
N2 - The three-dimensional (3D) integration process is a promising candidate to enhance electron-device performance. Typical 3D integration systems consist of vertically stacked several thin IC chips that are electrically connected with lots of through-Si vias (TSVs) and metal microbumps. Metal microbumps are surrounded by organic adhesive. An epoxy-based material, so-called underfill, has been widely used to fill the gap between several chips. In general, the coefficient of thermal expansion (CTE) of the underfill material is larger than that of metal microbumps. This CTE mismatch induces local bending stress in thinned IC chips. This local bending stress would affect the CMOS circuit in thinned IC chips. Therefore, we should suppress the local bending stress to realize 3D IC with high reliability. To suppress the local bending stress, we have proposed a novel underfill with negative-Thermal-expansion material. In this study, we investigated the characteristics of the negativethermal-expansion material surrounded by the matrix of the underfill.
AB - The three-dimensional (3D) integration process is a promising candidate to enhance electron-device performance. Typical 3D integration systems consist of vertically stacked several thin IC chips that are electrically connected with lots of through-Si vias (TSVs) and metal microbumps. Metal microbumps are surrounded by organic adhesive. An epoxy-based material, so-called underfill, has been widely used to fill the gap between several chips. In general, the coefficient of thermal expansion (CTE) of the underfill material is larger than that of metal microbumps. This CTE mismatch induces local bending stress in thinned IC chips. This local bending stress would affect the CMOS circuit in thinned IC chips. Therefore, we should suppress the local bending stress to realize 3D IC with high reliability. To suppress the local bending stress, we have proposed a novel underfill with negative-Thermal-expansion material. In this study, we investigated the characteristics of the negativethermal-expansion material surrounded by the matrix of the underfill.
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U2 - 10.1109/3DIC48104.2019.9058838
DO - 10.1109/3DIC48104.2019.9058838
M3 - Conference contribution
AN - SCOPUS:85084110723
T3 - IEEE 2019 International 3D Systems Integration Conference, 3DIC 2019
BT - IEEE 2019 International 3D Systems Integration Conference, 3DIC 2019
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2019 IEEE International 3D Systems Integration Conference, 3DIC 2019
Y2 - 8 October 2019 through 10 October 2019
ER -