Investigation of thermal stability of TiN film formed by atomic layer deposition using tetrakis(dimethylamino)titanium precursor for metal-gate metal-oxide-semiconductor field-effect transistor

Tetsuro Hayashida; Kazuhiko Endo; Yongxun Liu; Takahiro Kamei; Takashi Matsukawa; Shin Ichi O'uchi; Kunihiro Sakamoto; Junichi Tsukada; Yuki Ishikawa; Hiromi Yamauchi; Atsushi Ogura; Meishoku Masahara

doi:10.1143/JJAP.49.04DA16

Investigation of thermal stability of TiN film formed by atomic layer deposition using tetrakis(dimethylamino)titanium precursor for metal-gate metal-oxide-semiconductor field-effect transistor

Tetsuro Hayashida, Kazuhiko Endo, Yongxun Liu, Takahiro Kamei, Takashi Matsukawa, Shin Ichi O'uchi, Kunihiro Sakamoto, Junichi Tsukada, Yuki Ishikawa, Hiromi Yamauchi, Atsushi Ogura, Meishoku Masahara

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

In this paper, we describe the superiority of the titanium nitride (TiN) film formed by atomic layer deposition (ALD) using a tetrakis(dimethylamino) titanium (TDMAT) precursor for metal-gate electrodes of planar metal-oxide-semiconductor field-effect transistors (MOSFETs). It was demonstrated that the resistivity of the ALD TiN was significantly reduced by NH3 post deposition annealing (PDA). The electrical characteristics of the ALD-TiN-gate MOS capacitors and planar MOSFETs were evaluated and compared with those of the physical-vapor-deposited (PVD) TiN. The performance of the ALD-TiN-gate cases was confirmed to be superior to that of the PVD-TiN-gate cases, which was explained by the lower interface trap density (Dit) of the ALD TiN/SiO2 gate stack.

Original language	English
Article number	04DA16
Journal	Japanese journal of applied physics
Volume	49
Issue number	4 PART 2
DOIs	https://doi.org/10.1143/JJAP.49.04DA16
Publication status	Published - 2010 Apr
Externally published	Yes

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/JJAP.49.04DA16

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Hayashida, T., Endo, K., Liu, Y., Kamei, T., Matsukawa, T., O'uchi, S. I., Sakamoto, K., Tsukada, J., Ishikawa, Y., Yamauchi, H., Ogura, A., & Masahara, M. (2010). Investigation of thermal stability of TiN film formed by atomic layer deposition using tetrakis(dimethylamino)titanium precursor for metal-gate metal-oxide-semiconductor field-effect transistor. Japanese journal of applied physics, 49(4 PART 2), [04DA16]. https://doi.org/10.1143/JJAP.49.04DA16

Investigation of thermal stability of TiN film formed by atomic layer deposition using tetrakis(dimethylamino)titanium precursor for metal-gate metal-oxide-semiconductor field-effect transistor. / Hayashida, Tetsuro; Endo, Kazuhiko; Liu, Yongxun et al.
In: Japanese journal of applied physics, Vol. 49, No. 4 PART 2, 04DA16, 04.2010.

Research output: Contribution to journal › Article › peer-review

Hayashida, T, Endo, K, Liu, Y, Kamei, T, Matsukawa, T, O'uchi, SI, Sakamoto, K, Tsukada, J, Ishikawa, Y, Yamauchi, H, Ogura, A & Masahara, M 2010, 'Investigation of thermal stability of TiN film formed by atomic layer deposition using tetrakis(dimethylamino)titanium precursor for metal-gate metal-oxide-semiconductor field-effect transistor', Japanese journal of applied physics, vol. 49, no. 4 PART 2, 04DA16. https://doi.org/10.1143/JJAP.49.04DA16

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title = "Investigation of thermal stability of TiN film formed by atomic layer deposition using tetrakis(dimethylamino)titanium precursor for metal-gate metal-oxide-semiconductor field-effect transistor",

abstract = "In this paper, we describe the superiority of the titanium nitride (TiN) film formed by atomic layer deposition (ALD) using a tetrakis(dimethylamino) titanium (TDMAT) precursor for metal-gate electrodes of planar metal-oxide-semiconductor field-effect transistors (MOSFETs). It was demonstrated that the resistivity of the ALD TiN was significantly reduced by NH3 post deposition annealing (PDA). The electrical characteristics of the ALD-TiN-gate MOS capacitors and planar MOSFETs were evaluated and compared with those of the physical-vapor-deposited (PVD) TiN. The performance of the ALD-TiN-gate cases was confirmed to be superior to that of the PVD-TiN-gate cases, which was explained by the lower interface trap density (Dit) of the ALD TiN/SiO2 gate stack.",

author = "Tetsuro Hayashida and Kazuhiko Endo and Yongxun Liu and Takahiro Kamei and Takashi Matsukawa and O'uchi, {Shin Ichi} and Kunihiro Sakamoto and Junichi Tsukada and Yuki Ishikawa and Hiromi Yamauchi and Atsushi Ogura and Meishoku Masahara",

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AU - Endo, Kazuhiko

AU - Liu, Yongxun

AU - Kamei, Takahiro

AU - Matsukawa, Takashi

AU - O'uchi, Shin Ichi

AU - Sakamoto, Kunihiro

AU - Tsukada, Junichi

AU - Ishikawa, Yuki

AU - Yamauchi, Hiromi

AU - Ogura, Atsushi

AU - Masahara, Meishoku

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N2 - In this paper, we describe the superiority of the titanium nitride (TiN) film formed by atomic layer deposition (ALD) using a tetrakis(dimethylamino) titanium (TDMAT) precursor for metal-gate electrodes of planar metal-oxide-semiconductor field-effect transistors (MOSFETs). It was demonstrated that the resistivity of the ALD TiN was significantly reduced by NH3 post deposition annealing (PDA). The electrical characteristics of the ALD-TiN-gate MOS capacitors and planar MOSFETs were evaluated and compared with those of the physical-vapor-deposited (PVD) TiN. The performance of the ALD-TiN-gate cases was confirmed to be superior to that of the PVD-TiN-gate cases, which was explained by the lower interface trap density (Dit) of the ALD TiN/SiO2 gate stack.

AB - In this paper, we describe the superiority of the titanium nitride (TiN) film formed by atomic layer deposition (ALD) using a tetrakis(dimethylamino) titanium (TDMAT) precursor for metal-gate electrodes of planar metal-oxide-semiconductor field-effect transistors (MOSFETs). It was demonstrated that the resistivity of the ALD TiN was significantly reduced by NH3 post deposition annealing (PDA). The electrical characteristics of the ALD-TiN-gate MOS capacitors and planar MOSFETs were evaluated and compared with those of the physical-vapor-deposited (PVD) TiN. The performance of the ALD-TiN-gate cases was confirmed to be superior to that of the PVD-TiN-gate cases, which was explained by the lower interface trap density (Dit) of the ALD TiN/SiO2 gate stack.

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Investigation of thermal stability of TiN film formed by atomic layer deposition using tetrakis(dimethylamino)titanium precursor for metal-gate metal-oxide-semiconductor field-effect transistor

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