Investigation on Polarization and Trapping Dominated Reliability for Ferroelectric-HfZrOxGe FinFET Inverters

Tzu Chieh Hong; Chun Jung Su; Yao Jen Lee; Yiming Li; Seiji Samukawa; Tien Sheng Chao

doi:10.1109/EDTM53872.2022.9798106

Investigation on Polarization and Trapping Dominated Reliability for Ferroelectric-HfZrO_xGe FinFET Inverters

Tzu Chieh Hong, Chun Jung Su, Yao Jen Lee, Yiming Li, Seiji Samukawa, Tien Sheng Chao

Innovative Energy Research Center

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

In this work, we report ferroelectric HfZrOx (FE-HZO) Ge FinFET inverters fabricated by the low-damage neutral beam etching (NBE) technology. A remarkable voltage gain over 50 V/V is achieved. Cyclic operation of the inverters were performed to investigate the reliability of the devices. The distinct positive and negative shifts of voltage transfer curves are found owing to trap and polarization dominated mechanism, respectively. The findings of this work is conducive to better understanding of operation for ferroelectric-based Ge CMOS.

Original language	English
Title of host publication	6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	241-243
Number of pages	3
ISBN (Electronic)	9781665421775
DOIs	https://doi.org/10.1109/EDTM53872.2022.9798106
Publication status	Published - 2022
Event	6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022 - Virtual, Online, Japan Duration: 2022 Mar 6 → 2022 Mar 9

Publication series

Name	6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022

Conference

Conference	6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022
Country/Territory	Japan
City	Virtual, Online
Period	22/3/6 → 22/3/9

Keywords

ferroelectric
FinFET
Ge CMOS
NBE

ASJC Scopus subject areas

Process Chemistry and Technology
Hardware and Architecture
Electrical and Electronic Engineering
Industrial and Manufacturing Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/EDTM53872.2022.9798106

Cite this

Hong, T. C., Su, C. J., Lee, Y. J., Li, Y., Samukawa, S., & Chao, T. S. (2022). Investigation on Polarization and Trapping Dominated Reliability for Ferroelectric-HfZrO_xGe FinFET Inverters. In 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022 (pp. 241-243). (6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM53872.2022.9798106

Investigation on Polarization and Trapping Dominated Reliability for Ferroelectric-HfZrO_xGe FinFET Inverters. / Hong, Tzu Chieh; Su, Chun Jung; Lee, Yao Jen et al.
6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022. Institute of Electrical and Electronics Engineers Inc., 2022. p. 241-243 (6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Hong, TC, Su, CJ, Lee, YJ, Li, Y, Samukawa, S & Chao, TS 2022, Investigation on Polarization and Trapping Dominated Reliability for Ferroelectric-HfZrO_xGe FinFET Inverters. in 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022. 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022, Institute of Electrical and Electronics Engineers Inc., pp. 241-243, 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022, Virtual, Online, Japan, 22/3/6. https://doi.org/10.1109/EDTM53872.2022.9798106

Hong TC, Su CJ, Lee YJ, Li Y, Samukawa S, Chao TS. Investigation on Polarization and Trapping Dominated Reliability for Ferroelectric-HfZrO_xGe FinFET Inverters. In 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022. Institute of Electrical and Electronics Engineers Inc. 2022. p. 241-243. (6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022). doi: 10.1109/EDTM53872.2022.9798106

Hong, Tzu Chieh ; Su, Chun Jung ; Lee, Yao Jen et al. / Investigation on Polarization and Trapping Dominated Reliability for Ferroelectric-HfZrO_xGe FinFET Inverters. 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022. Institute of Electrical and Electronics Engineers Inc., 2022. pp. 241-243 (6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022).

@inproceedings{c971dd0b9fa94616aeb2dbdf507ad4b3,

title = "Investigation on Polarization and Trapping Dominated Reliability for Ferroelectric-HfZrOxGe FinFET Inverters",

abstract = "In this work, we report ferroelectric HfZrOx (FE-HZO) Ge FinFET inverters fabricated by the low-damage neutral beam etching (NBE) technology. A remarkable voltage gain over 50 V/V is achieved. Cyclic operation of the inverters were performed to investigate the reliability of the devices. The distinct positive and negative shifts of voltage transfer curves are found owing to trap and polarization dominated mechanism, respectively. The findings of this work is conducive to better understanding of operation for ferroelectric-based Ge CMOS.",

keywords = "ferroelectric, FinFET, Ge CMOS, NBE",

author = "Hong, {Tzu Chieh} and Su, {Chun Jung} and Lee, {Yao Jen} and Yiming Li and Seiji Samukawa and Chao, {Tien Sheng}",

note = "Funding Information: The authors would like to thank the support of Ministry of Science and Technology, Taiwan (program number: MOST 109-2628-E-492 -001 -MY3, MOST 109-2923-E-492 -001 -MY3, MOST 109-2923-E-492 -002 -MY3, MOST 110-2221-E-492 -014 -MY3). Publisher Copyright: {\textcopyright} 2022 IEEE.; 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022 ; Conference date: 06-03-2022 Through 09-03-2022",

year = "2022",

doi = "10.1109/EDTM53872.2022.9798106",

language = "English",

series = "6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "241--243",

booktitle = "6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022",

}

TY - GEN

T1 - Investigation on Polarization and Trapping Dominated Reliability for Ferroelectric-HfZrOxGe FinFET Inverters

AU - Hong, Tzu Chieh

AU - Su, Chun Jung

AU - Lee, Yao Jen

AU - Li, Yiming

AU - Samukawa, Seiji

AU - Chao, Tien Sheng

N1 - Funding Information: The authors would like to thank the support of Ministry of Science and Technology, Taiwan (program number: MOST 109-2628-E-492 -001 -MY3, MOST 109-2923-E-492 -001 -MY3, MOST 109-2923-E-492 -002 -MY3, MOST 110-2221-E-492 -014 -MY3). Publisher Copyright: © 2022 IEEE.

PY - 2022

Y1 - 2022

N2 - In this work, we report ferroelectric HfZrOx (FE-HZO) Ge FinFET inverters fabricated by the low-damage neutral beam etching (NBE) technology. A remarkable voltage gain over 50 V/V is achieved. Cyclic operation of the inverters were performed to investigate the reliability of the devices. The distinct positive and negative shifts of voltage transfer curves are found owing to trap and polarization dominated mechanism, respectively. The findings of this work is conducive to better understanding of operation for ferroelectric-based Ge CMOS.

AB - In this work, we report ferroelectric HfZrOx (FE-HZO) Ge FinFET inverters fabricated by the low-damage neutral beam etching (NBE) technology. A remarkable voltage gain over 50 V/V is achieved. Cyclic operation of the inverters were performed to investigate the reliability of the devices. The distinct positive and negative shifts of voltage transfer curves are found owing to trap and polarization dominated mechanism, respectively. The findings of this work is conducive to better understanding of operation for ferroelectric-based Ge CMOS.

KW - ferroelectric

KW - FinFET

KW - Ge CMOS

KW - NBE

UR - http://www.scopus.com/inward/record.url?scp=85133975452&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85133975452&partnerID=8YFLogxK

U2 - 10.1109/EDTM53872.2022.9798106

DO - 10.1109/EDTM53872.2022.9798106

M3 - Conference contribution

AN - SCOPUS:85133975452

T3 - 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022

SP - 241

EP - 243

BT - 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022

Y2 - 6 March 2022 through 9 March 2022

ER -