TY - GEN
T1 - Investigations of all lead free IGBT module structure with low thermal resistance and high reliability
AU - Nishimura, Y.
AU - Morozumi, A.
AU - Mochizuki, E.
AU - Takahashi, Y.
PY - 2006
Y1 - 2006
N2 - This paper presents all lead free IGBT module structure with low thermal resistance and high reliability. Using thick copper foil alumina DCB, Sn/Ag/In solder, and copper base, we have achieved low thermal resistance as same as the current aluminum nitride (AlN) IGBT module structure. In addition to low thermal resistance, this new structure shows excellent temperature cycling capability of 3000 cycles.
AB - This paper presents all lead free IGBT module structure with low thermal resistance and high reliability. Using thick copper foil alumina DCB, Sn/Ag/In solder, and copper base, we have achieved low thermal resistance as same as the current aluminum nitride (AlN) IGBT module structure. In addition to low thermal resistance, this new structure shows excellent temperature cycling capability of 3000 cycles.
KW - High reliability
KW - IGBT module stractuere lead free solder
KW - Low thermal resistance
UR - http://www.scopus.com/inward/record.url?scp=34247487507&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=34247487507&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:34247487507
SN - 0780397142
SN - 9780780397149
T3 - Proceedings of the International Symposium on Power Semiconductor Devices and ICs
BT - Proceedings of the 18th International Symposium on Power Semiconductor Devices and ICs, ISPSD'06
T2 - 18th International Symposium on Power Semiconductor Devices and ICs, ISPSD'06
Y2 - 4 June 2006 through 8 June 2006
ER -