Investigations of thermocompression bonding with thin metal layers

J. Froemel; M. Baum; M. Wiemer; F. Roscher; M. Haubold; C. Jia; T. Gessner

doi:10.1109/TRANSDUCERS.2011.5969495

Investigations of thermocompression bonding with thin metal layers

J. Froemel, M. Baum, M. Wiemer, F. Roscher, M. Haubold, C. Jia, T. Gessner

Micro System Integration Center (μSIC)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

41 Citations (Scopus)

Abstract

In this study we successfully bonded silicon wafer substrates with metal based thermocompression technology. This technology has the advantage of inherent possibility of hermetic sealing and electrical contact. We used three different kinds of metals: gold, copper and aluminum. We will show the hermeticity, bonding strength and reliability of the different processes and compare the results.

Original language	English
Title of host publication	2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11
Pages	990-993
Number of pages	4
DOIs	https://doi.org/10.1109/TRANSDUCERS.2011.5969495
Publication status	Published - 2011
Event	2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11 - Beijing, China Duration: 2011 Jun 5 → 2011 Jun 9

Publication series

Name	2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11

Conference

Conference	2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11
Country/Territory	China
City	Beijing
Period	11/6/5 → 11/6/9

Keywords

Bonded interface
MEMS
Thinf films
Wafer bonding

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10.1109/TRANSDUCERS.2011.5969495

Cite this

Froemel, J., Baum, M., Wiemer, M., Roscher, F., Haubold, M., Jia, C., & Gessner, T. (2011). Investigations of thermocompression bonding with thin metal layers. In 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11 (pp. 990-993). Article 5969495 (2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11). https://doi.org/10.1109/TRANSDUCERS.2011.5969495

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abstract = "In this study we successfully bonded silicon wafer substrates with metal based thermocompression technology. This technology has the advantage of inherent possibility of hermetic sealing and electrical contact. We used three different kinds of metals: gold, copper and aluminum. We will show the hermeticity, bonding strength and reliability of the different processes and compare the results.",

keywords = "Bonded interface, MEMS, Thinf films, Wafer bonding",

author = "J. Froemel and M. Baum and M. Wiemer and F. Roscher and M. Haubold and C. Jia and T. Gessner",

year = "2011",

doi = "10.1109/TRANSDUCERS.2011.5969495",

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series = "2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11",

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booktitle = "2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11",

note = "2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11 ; Conference date: 05-06-2011 Through 09-06-2011",

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Froemel, J, Baum, M, Wiemer, M, Roscher, F, Haubold, M, Jia, C & Gessner, T 2011, Investigations of thermocompression bonding with thin metal layers. in 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11., 5969495, 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11, pp. 990-993, 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11, Beijing, China, 11/6/5. https://doi.org/10.1109/TRANSDUCERS.2011.5969495

Investigations of thermocompression bonding with thin metal layers. / Froemel, J.; Baum, M.; Wiemer, M. et al.
2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11. 2011. p. 990-993 5969495 (2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Baum, M.

AU - Wiemer, M.

AU - Roscher, F.

AU - Haubold, M.

AU - Jia, C.

AU - Gessner, T.

PY - 2011

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AB - In this study we successfully bonded silicon wafer substrates with metal based thermocompression technology. This technology has the advantage of inherent possibility of hermetic sealing and electrical contact. We used three different kinds of metals: gold, copper and aluminum. We will show the hermeticity, bonding strength and reliability of the different processes and compare the results.

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Froemel J, Baum M, Wiemer M, Roscher F, Haubold M, Jia C et al. Investigations of thermocompression bonding with thin metal layers. In 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11. 2011. p. 990-993. 5969495. (2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11). doi: 10.1109/TRANSDUCERS.2011.5969495

Investigations of thermocompression bonding with thin metal layers

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