Ion Beam Analysis of Molecular Beam Epitaxy InAIAs/InGaAs Layer Structures

D. V. Morgan; H. Ohno; C. E.C. Wood; L. F. Eastman; J. D. Berry

doi:10.1149/1.2127262

Ion Beam Analysis of Molecular Beam Epitaxy InAIAs/InGaAs Layer Structures

D. V. Morgan, H. Ohno, C. E.C. Wood, L. F. Eastman, J. D. Berry

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

In this paper the Rutherford backscattering technique combined with channeling is used to study the stoichiometry and perfection of molecular beam epitaxial layers of InAlAs and InGaAs. Corroborative evidence from SIMS and Auger profiling are used to supplement the RBS studies.

Original language	English
Pages (from-to)	2419-2424
Number of pages	6
Journal	Journal of the Electrochemical Society
Volume	128
Issue number	11
DOIs	https://doi.org/10.1149/1.2127262
Publication status	Published - 1981
Externally published	Yes

Keywords

MBE
RBS studies
channeling

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1149/1.2127262

Cite this

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title = "Ion Beam Analysis of Molecular Beam Epitaxy InAIAs/InGaAs Layer Structures",

abstract = "In this paper the Rutherford backscattering technique combined with channeling is used to study the stoichiometry and perfection of molecular beam epitaxial layers of InAlAs and InGaAs. Corroborative evidence from SIMS and Auger profiling are used to supplement the RBS studies.",

keywords = "MBE, RBS studies, channeling",

author = "Morgan, {D. V.} and H. Ohno and Wood, {C. E.C.} and Eastman, {L. F.} and Berry, {J. D.}",

year = "1981",

doi = "10.1149/1.2127262",

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journal = "Journal of the Electrochemical Society",

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AU - Morgan, D. V.

AU - Ohno, H.

AU - Wood, C. E.C.

AU - Eastman, L. F.

AU - Berry, J. D.

PY - 1981

Y1 - 1981

N2 - In this paper the Rutherford backscattering technique combined with channeling is used to study the stoichiometry and perfection of molecular beam epitaxial layers of InAlAs and InGaAs. Corroborative evidence from SIMS and Auger profiling are used to supplement the RBS studies.

AB - In this paper the Rutherford backscattering technique combined with channeling is used to study the stoichiometry and perfection of molecular beam epitaxial layers of InAlAs and InGaAs. Corroborative evidence from SIMS and Auger profiling are used to supplement the RBS studies.

KW - MBE

KW - RBS studies

KW - channeling

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DO - 10.1149/1.2127262

M3 - Article

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ER -

Ion Beam Analysis of Molecular Beam Epitaxy InAIAs/InGaAs Layer Structures

Abstract

Keywords

ASJC Scopus subject areas

UN SDGs

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