Ion-species dependence of interdiffusion in ion-implanted GaAs-AlAs superlattices

Yoshiro Hirayama, Yoshifumi Suzuki, Hiroshi Okamoto

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The interdiffusion coefficients of Ga and Al were measured for GaAs-AlAs superlattices ion-implanted with Be, B, F, Si, Ar and As. The degree of interdiffusion enhancement was in the order Si > F > As > B and no interdiffusion enhance¬ment effects were observed for Be and Ar. Except for Be, impurities with large diffusion coefficients have a tendency to enhance the impurity-induced compositional disordering.

Original languageEnglish
Pages (from-to)1498-1502
Number of pages5
JournalJapanese Journal of Applied Physics
Issue number11 R
Publication statusPublished - 1985 Nov


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