TY - JOUR
T1 - Ion-species dependence of interdiffusion in ion-implanted GaAs-AlAs superlattices
AU - Hirayama, Yoshiro
AU - Suzuki, Yoshifumi
AU - Okamoto, Hiroshi
PY - 1985/11
Y1 - 1985/11
N2 - The interdiffusion coefficients of Ga and Al were measured for GaAs-AlAs superlattices ion-implanted with Be, B, F, Si, Ar and As. The degree of interdiffusion enhancement was in the order Si > F > As > B and no interdiffusion enhance¬ment effects were observed for Be and Ar. Except for Be, impurities with large diffusion coefficients have a tendency to enhance the impurity-induced compositional disordering.
AB - The interdiffusion coefficients of Ga and Al were measured for GaAs-AlAs superlattices ion-implanted with Be, B, F, Si, Ar and As. The degree of interdiffusion enhancement was in the order Si > F > As > B and no interdiffusion enhance¬ment effects were observed for Be and Ar. Except for Be, impurities with large diffusion coefficients have a tendency to enhance the impurity-induced compositional disordering.
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U2 - 10.1143/JJAP.24.1498
DO - 10.1143/JJAP.24.1498
M3 - Article
AN - SCOPUS:0022152274
SN - 0021-4922
VL - 24
SP - 1498
EP - 1502
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 11 R
ER -