TY - JOUR
T1 - Ionic liquid/ZnO(0001) single crystal and epitaxial film interfaces studied through a combination of electrochemical measurements and a pulsed laser deposition process under vacuum
AU - Kanai, Mariko
AU - Watanabe, Ko
AU - Maruyama, Shingo
AU - Matsumoto, Yuji
N1 - Funding Information:
This work has been partially supported by a Grant-in-Aid from the Ministry of Education, Culture, Sports, Science and Technology of Japan (No. 20360294).
Publisher Copyright:
This journal is © the Owner Societies.
PY - 2019
Y1 - 2019
N2 - O-Polar ZnO(0001) single crystals and ZnO and Mg-doped ZnO (MgZnO) films which were subsequently deposited on the ZnO crystals by a pulsed laser deposition (PLD) method were electrochemically investigated through the interfaces with ionic liquid (IL) in a vacuum. The sample surfaces were confirmed to be atomically clean and flat by reflection high energy electron diffraction (RHEED) observation, prior to their electrochemical measurements. Electrochemical impedance spectroscopy (EIS) and cyclic voltammetry (CV) were then performed, and the donor density, flat band potential of these ZnO samples, and the electric double layer capacitance at the IL/ZnO interfaces were successfully evaluated. The flat band potentials of ZnO and MgZnO films were found to shift to more negative potentials relative to those of the single crystal ZnO, with different values for thicker films, respectively. Some possible origins of the different flat band potentials between ZnO and MgZnO films, and their film thickness dependence of the flat band potential will be discussed in this paper.
AB - O-Polar ZnO(0001) single crystals and ZnO and Mg-doped ZnO (MgZnO) films which were subsequently deposited on the ZnO crystals by a pulsed laser deposition (PLD) method were electrochemically investigated through the interfaces with ionic liquid (IL) in a vacuum. The sample surfaces were confirmed to be atomically clean and flat by reflection high energy electron diffraction (RHEED) observation, prior to their electrochemical measurements. Electrochemical impedance spectroscopy (EIS) and cyclic voltammetry (CV) were then performed, and the donor density, flat band potential of these ZnO samples, and the electric double layer capacitance at the IL/ZnO interfaces were successfully evaluated. The flat band potentials of ZnO and MgZnO films were found to shift to more negative potentials relative to those of the single crystal ZnO, with different values for thicker films, respectively. Some possible origins of the different flat band potentials between ZnO and MgZnO films, and their film thickness dependence of the flat band potential will be discussed in this paper.
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U2 - 10.1039/c9cp04875h
DO - 10.1039/c9cp04875h
M3 - Article
C2 - 31714555
AN - SCOPUS:85075614028
SN - 1463-9076
VL - 21
SP - 25506
EP - 25512
JO - Physical Chemistry Chemical Physics
JF - Physical Chemistry Chemical Physics
IS - 45
ER -