IQE and EQE of the nitride-based UV/DUV LEDs

H. Amano; G. J. Park; Tomoyuki Tanikawa; Y. Honda; M. Yamaguchi; K. Ban; K. Nagata; K. Nonaka; K. Takeda; M. Iwaya; T. Takeuchi; S. Kamiyama; I. Akasaki

IQE and EQE of the nitride-based UV/DUV LEDs

H. Amano, G. J. Park, Tomoyuki Tanikawa, Y. Honda, M. Yamaguchi, K. Ban, K. Nagata, K. Nonaka, K. Takeda, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Internal and external quantum efficiency and injection efficiency of nitride-based UV/DUV devices were investigated. Non radiative component in the photoluminescence and electroluminescence is found to be strongly correlated with the dislocation density.

Original language	English
Title of host publication	Quantum Electronics and Laser Science Conference, QELS 2011
Publication status	Published - 2011 Dec 1
Externally published	Yes
Event	Quantum Electronics and Laser Science Conference, QELS 2011 - Baltimore, MD, United States Duration: 2011 May 1 → 2011 May 6

Publication series

Name	Optics InfoBase Conference Papers
ISSN (Electronic)	2162-2701

Other

Other	Quantum Electronics and Laser Science Conference, QELS 2011
Country/Territory	United States
City	Baltimore, MD
Period	11/5/1 → 11/5/6

ASJC Scopus subject areas

Instrumentation
Atomic and Molecular Physics, and Optics

Cite this

Amano, H, Park, GJ, Tanikawa, T, Honda, Y, Yamaguchi, M, Ban, K, Nagata, K, Nonaka, K, Takeda, K, Iwaya, M, Takeuchi, T, Kamiyama, S & Akasaki, I 2011, IQE and EQE of the nitride-based UV/DUV LEDs. in Quantum Electronics and Laser Science Conference, QELS 2011. Optics InfoBase Conference Papers, Quantum Electronics and Laser Science Conference, QELS 2011, Baltimore, MD, United States, 11/5/1.

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title = "IQE and EQE of the nitride-based UV/DUV LEDs",

abstract = "Internal and external quantum efficiency and injection efficiency of nitride-based UV/DUV devices were investigated. Non radiative component in the photoluminescence and electroluminescence is found to be strongly correlated with the dislocation density.",

author = "H. Amano and Park, {G. J.} and Tomoyuki Tanikawa and Y. Honda and M. Yamaguchi and K. Ban and K. Nagata and K. Nonaka and K. Takeda and M. Iwaya and T. Takeuchi and S. Kamiyama and I. Akasaki",

year = "2011",

month = dec,

day = "1",

language = "English",

isbn = "9781557529107",

series = "Optics InfoBase Conference Papers",

booktitle = "Quantum Electronics and Laser Science Conference, QELS 2011",

note = "Quantum Electronics and Laser Science Conference, QELS 2011 ; Conference date: 01-05-2011 Through 06-05-2011",

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TY - GEN

T1 - IQE and EQE of the nitride-based UV/DUV LEDs

AU - Amano, H.

AU - Park, G. J.

AU - Tanikawa, Tomoyuki

AU - Honda, Y.

AU - Yamaguchi, M.

AU - Ban, K.

AU - Nagata, K.

AU - Nonaka, K.

AU - Takeda, K.

AU - Iwaya, M.

AU - Takeuchi, T.

AU - Kamiyama, S.

AU - Akasaki, I.

PY - 2011/12/1

Y1 - 2011/12/1

N2 - Internal and external quantum efficiency and injection efficiency of nitride-based UV/DUV devices were investigated. Non radiative component in the photoluminescence and electroluminescence is found to be strongly correlated with the dislocation density.

AB - Internal and external quantum efficiency and injection efficiency of nitride-based UV/DUV devices were investigated. Non radiative component in the photoluminescence and electroluminescence is found to be strongly correlated with the dislocation density.

UR - http://www.scopus.com/inward/record.url?scp=84894041825&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84894041825&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:84894041825

SN - 9781557529107

T3 - Optics InfoBase Conference Papers

BT - Quantum Electronics and Laser Science Conference, QELS 2011

T2 - Quantum Electronics and Laser Science Conference, QELS 2011

Y2 - 1 May 2011 through 6 May 2011

ER -

IQE and EQE of the nitride-based UV/DUV LEDs

Abstract

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ASJC Scopus subject areas

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