TY - JOUR
T1 - Iron-doped indium saving indium-tin oxide (ITO) thin films sputtered on preheated substrates
AU - Ohtsuka, M.
AU - Sergiienko, R.
AU - Petrovska, S.
AU - Ilkiv, B.
AU - Nakamura, T.
N1 - Funding Information:
The present research was supported by New Energy and Industrial Technology Development Organization (NEDO), Japan .
Publisher Copyright:
© 2018 Elsevier GmbH
PY - 2019/2
Y1 - 2019/2
N2 - Iron-doped indium tin oxide (ITO) thin films with reduced to 50 mass% indium oxide content were prepared by co-sputtering of ITO and Fe2O3 targets in mixed argon-oxygen atmosphere onto glass substrates preheated at 523 K. The influence of working gas flow rate and heat treatment temperature on the electrical, optical, structural, and morphological properties of the films was characterized by means of four point probe, Ultraviolet-Visible (UV–Vis) spectroscopy, X-ray diffraction and atomic force microscopy methods. Doping of ITO films by iron using Fe2O3 target resulted in increasing transmittance of films. Iron-doping hindered the crystallization of the ITO thin films. It has been found from the electrical measurements that films sputtered under optimum conditions showed values of volume resistivity 992 μΩcm. It has been shown that iron-doped indium tin oxide films have smooth surface in contrast to conventional ITO.
AB - Iron-doped indium tin oxide (ITO) thin films with reduced to 50 mass% indium oxide content were prepared by co-sputtering of ITO and Fe2O3 targets in mixed argon-oxygen atmosphere onto glass substrates preheated at 523 K. The influence of working gas flow rate and heat treatment temperature on the electrical, optical, structural, and morphological properties of the films was characterized by means of four point probe, Ultraviolet-Visible (UV–Vis) spectroscopy, X-ray diffraction and atomic force microscopy methods. Doping of ITO films by iron using Fe2O3 target resulted in increasing transmittance of films. Iron-doping hindered the crystallization of the ITO thin films. It has been found from the electrical measurements that films sputtered under optimum conditions showed values of volume resistivity 992 μΩcm. It has been shown that iron-doped indium tin oxide films have smooth surface in contrast to conventional ITO.
KW - Direct current sputtering
KW - Electrical properties
KW - Iron-doped indium tin oxide
KW - Optical properties
KW - Radio frequency sputtering
UR - http://www.scopus.com/inward/record.url?scp=85055998398&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85055998398&partnerID=8YFLogxK
U2 - 10.1016/j.ijleo.2018.10.130
DO - 10.1016/j.ijleo.2018.10.130
M3 - Article
AN - SCOPUS:85055998398
SN - 0030-4026
VL - 179
SP - 19
EP - 28
JO - Optik
JF - Optik
ER -