TY - JOUR
T1 - Irradiation creep of high purity CVD silicon carbide as estimated by the bend stress relaxation method
AU - Katoh, Y.
AU - Snead, L. L.
AU - Hinoki, T.
AU - Kondo, S.
AU - Kohyama, A.
N1 - Funding Information:
This research was sponsored by the Office of Fusion Energy Sciences, US Department of Energy under contract DE-AC05-00OR22725 with UT-Battelle, LLC., JUPITER-II Japan-US collaboration on fusion blanket systems and materials, and US Department of Energy Nuclear Energy Research Initiative Program NERI-2002-131.
PY - 2007/8/1
Y1 - 2007/8/1
N2 - The bend stress relaxation technique was applied for an irradiation creep study of high purity, chemically vapor-deposited beta-phase silicon carbide (CVD SiC) ceramic. A constant bend strain was applied to thin strip samples during neutron irradiation to fluences 0.2-4.2 dpa at various temperatures in the range ∼400 to ∼1080 °C. Irradiation creep strain at <0.7 dpa exhibited only a weak dependence on irradiation temperature. However, the creep strain dependence on fluence was non-linear due to the early domination of the initial transient creep, and a transition in creep behavior was found between ∼950 and ∼1080 °C. Steady-state irradiation creep compliances of polycrystalline CVD SiC at doses >0.7 dpa were estimated to be 2.7(±2.6) × 10-7 and 1.5(±0.8) × 10-6 (MPa dpa)-1 at ∼600 to ∼950 °C and ∼1080 °C, respectively, whereas linear-averaged creep compliances of 1-2 × 10-6 (MPa dpa)-1 were obtained for doses of 0.6-0.7 dpa at all temperatures. Monocrystalline 3C SiC samples exhibited significantly smaller transient creep strain and greater subsequent deformation when loaded along 〈0 1 1〉 direction.
AB - The bend stress relaxation technique was applied for an irradiation creep study of high purity, chemically vapor-deposited beta-phase silicon carbide (CVD SiC) ceramic. A constant bend strain was applied to thin strip samples during neutron irradiation to fluences 0.2-4.2 dpa at various temperatures in the range ∼400 to ∼1080 °C. Irradiation creep strain at <0.7 dpa exhibited only a weak dependence on irradiation temperature. However, the creep strain dependence on fluence was non-linear due to the early domination of the initial transient creep, and a transition in creep behavior was found between ∼950 and ∼1080 °C. Steady-state irradiation creep compliances of polycrystalline CVD SiC at doses >0.7 dpa were estimated to be 2.7(±2.6) × 10-7 and 1.5(±0.8) × 10-6 (MPa dpa)-1 at ∼600 to ∼950 °C and ∼1080 °C, respectively, whereas linear-averaged creep compliances of 1-2 × 10-6 (MPa dpa)-1 were obtained for doses of 0.6-0.7 dpa at all temperatures. Monocrystalline 3C SiC samples exhibited significantly smaller transient creep strain and greater subsequent deformation when loaded along 〈0 1 1〉 direction.
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U2 - 10.1016/j.jnucmat.2007.03.086
DO - 10.1016/j.jnucmat.2007.03.086
M3 - Article
AN - SCOPUS:34447550546
SN - 0022-3115
VL - 367-370 A
SP - 758
EP - 763
JO - Journal of Nuclear Materials
JF - Journal of Nuclear Materials
IS - SPEC. ISS.
ER -