Itinerant 5f electrons and the Fermi surface properties in neptunium compounds

D. Aoki; H. Yamagami; Y. Homma; H. Sakai; S. Ikeda; Y. Shiokawa; E. Yamamoto; A. Nakamura; Y. Haga; R. Settai; Y. Onuki

doi:10.1016/j.jmmm.2006.10.499

Itinerant 5f electrons and the Fermi surface properties in neptunium compounds

D. Aoki, H. Yamagami, Y. Homma, H. Sakai, S. Ikeda, Y. Shiokawa, E. Yamamoto, A. Nakamura, Y. Haga, R. Settai, Y. Onuki

Materials Processing and Characterization Division

Research output: Contribution to journal › Article › peer-review

Abstract

We grew high-quality single crystals of NpGe₃, NpIn₃, NpCoGa₅, NpRhGa₅ and NpFe₄ P₁₂ by the flux method, and measured the de Haas-van Alphen (dHvA) effect, magnetic susceptibility and resistivity. The results of dHvA experiments in NpGe₃, NpCoGa₅ and NpRhGa₅ were well explained by the energy band calculation based on the 5f-itinerant model, while the topology of Fermi surfaces in NpIn₃ is similar to those of LaIn₃, implying the 5f-localized nature of NpIn₃. The skutterudite compound NpFe₄ P₁₂ is a low carrier system with the 5 f³ configuration.

Original language	English
Pages (from-to)	1678-1683
Number of pages	6
Journal	Journal of Magnetism and Magnetic Materials
Volume	310
Issue number	2 SUPPL. PART 2
DOIs	https://doi.org/10.1016/j.jmmm.2006.10.499
Publication status	Published - 2007 Mar

Keywords

5f electron
Fermi surface
Transuranium compound
dHvA effect

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1016/j.jmmm.2006.10.499

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title = "Itinerant 5f electrons and the Fermi surface properties in neptunium compounds",

abstract = "We grew high-quality single crystals of NpGe3, NpIn3, NpCoGa5, NpRhGa5 and NpFe4 P12 by the flux method, and measured the de Haas-van Alphen (dHvA) effect, magnetic susceptibility and resistivity. The results of dHvA experiments in NpGe3, NpCoGa5 and NpRhGa5 were well explained by the energy band calculation based on the 5f-itinerant model, while the topology of Fermi surfaces in NpIn3 is similar to those of LaIn3, implying the 5f-localized nature of NpIn3. The skutterudite compound NpFe4 P12 is a low carrier system with the 5 f3 configuration.",

keywords = "5f electron, Fermi surface, Transuranium compound, dHvA effect",

author = "D. Aoki and H. Yamagami and Y. Homma and H. Sakai and S. Ikeda and Y. Shiokawa and E. Yamamoto and A. Nakamura and Y. Haga and R. Settai and Y. Onuki",

note = "Funding Information: This work was financially supported by Grants-in-Aid for Scientific Research (A), (C), Young Scientists (A), Scientific Research on Priority Areas and Creative Scientific Research (15GS0213) from the Japan Society for the Promotion of Science.",

year = "2007",

month = mar,

doi = "10.1016/j.jmmm.2006.10.499",

language = "English",

volume = "310",

pages = "1678--1683",

journal = "Journal of Magnetism and Magnetic Materials",

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publisher = "Elsevier",

number = "2 SUPPL. PART 2",

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T1 - Itinerant 5f electrons and the Fermi surface properties in neptunium compounds

AU - Aoki, D.

AU - Yamagami, H.

AU - Homma, Y.

AU - Sakai, H.

AU - Ikeda, S.

AU - Shiokawa, Y.

AU - Yamamoto, E.

AU - Nakamura, A.

AU - Haga, Y.

AU - Settai, R.

AU - Onuki, Y.

N1 - Funding Information: This work was financially supported by Grants-in-Aid for Scientific Research (A), (C), Young Scientists (A), Scientific Research on Priority Areas and Creative Scientific Research (15GS0213) from the Japan Society for the Promotion of Science.

PY - 2007/3

Y1 - 2007/3

N2 - We grew high-quality single crystals of NpGe3, NpIn3, NpCoGa5, NpRhGa5 and NpFe4 P12 by the flux method, and measured the de Haas-van Alphen (dHvA) effect, magnetic susceptibility and resistivity. The results of dHvA experiments in NpGe3, NpCoGa5 and NpRhGa5 were well explained by the energy band calculation based on the 5f-itinerant model, while the topology of Fermi surfaces in NpIn3 is similar to those of LaIn3, implying the 5f-localized nature of NpIn3. The skutterudite compound NpFe4 P12 is a low carrier system with the 5 f3 configuration.

AB - We grew high-quality single crystals of NpGe3, NpIn3, NpCoGa5, NpRhGa5 and NpFe4 P12 by the flux method, and measured the de Haas-van Alphen (dHvA) effect, magnetic susceptibility and resistivity. The results of dHvA experiments in NpGe3, NpCoGa5 and NpRhGa5 were well explained by the energy band calculation based on the 5f-itinerant model, while the topology of Fermi surfaces in NpIn3 is similar to those of LaIn3, implying the 5f-localized nature of NpIn3. The skutterudite compound NpFe4 P12 is a low carrier system with the 5 f3 configuration.

KW - 5f electron

KW - Fermi surface

KW - Transuranium compound

KW - dHvA effect

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JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

IS - 2 SUPPL. PART 2

ER -

Itinerant 5f electrons and the Fermi surface properties in neptunium compounds

Abstract

Keywords

ASJC Scopus subject areas

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