IVA-4 Room-Temperature Operation of 645-nm AlxGa1−xAs Multi-Quantum-Well Laser Diodes Grown by Molecular-Beam Epitaxy

Hidetoshi Iwamura; Tadashi Saku; Yoshiro Hirayama; Yoshifumi Suzuki; Hiroshi Okamoto

doi:10.1109/T-ED.1985.22341

IVA-4 Room-Temperature Operation of 645-nm Al_xGa_1−xAs Multi-Quantum-Well Laser Diodes Grown by Molecular-Beam Epitaxy

Hidetoshi Iwamura, Tadashi Saku, Yoshiro Hirayama, Yoshifumi Suzuki, Hiroshi Okamoto

Center for Science and Innovation in Spintronics (CSIS)

Nippon Telegraph & Telephone

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	2540
Number of pages	1
Journal	IEEE Transactions on Electron Devices
Volume	32
Issue number	11
DOIs	https://doi.org/10.1109/T-ED.1985.22341
Publication status	Published - 1985 Nov

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10.1109/T-ED.1985.22341

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title = "IVA-4 Room-Temperature Operation of 645-nm AlxGa1−xAs Multi-Quantum-Well Laser Diodes Grown by Molecular-Beam Epitaxy",

author = "Hidetoshi Iwamura and Tadashi Saku and Yoshiro Hirayama and Yoshifumi Suzuki and Hiroshi Okamoto",

year = "1985",

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AU - Suzuki, Yoshifumi

AU - Okamoto, Hiroshi

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IVA-4 Room-Temperature Operation of 645-nm AlxGa1−xAs Multi-Quantum-Well Laser Diodes Grown by Molecular-Beam Epitaxy

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IVA-4 Room-Temperature Operation of 645-nm Al_xGa_1−xAs Multi-Quantum-Well Laser Diodes Grown by Molecular-Beam Epitaxy