Junction area dependence of critical current density in Bi-2212 stacked junction

T. Kawae; K. Inomata; S. J. Kim; Y. I. Latyshev; K. Nakajima; T. Yamashita; S. Kishida; T. Hatano

doi:10.1088/0953-2048/14/12/325

Junction area dependence of critical current density in Bi-2212 stacked junction

T. Kawae, K. Inomata, S. J. Kim, Y. I. Latyshev, K. Nakajima, T. Yamashita, S. Kishida, T. Hatano

Research Institute of Electrical Communication (RIEC)

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

We report the characteristics of stacked junctions fabricated by the focused ion beam etching method on a Bi-2212 whisker with low carrier concentration. In order to achieve low carrier concentration, the whisker edges were etched and the sample was annealed in 1 atm of flowing Ar at 200 °C for 1h. A drop of critical current density (J_c) occurred when junction area (S) was decreased to the submicron range, and then the charging energy of the stack (E_c) was comparable to Josephson coupling energy (E_J). The E_c/E_J-J_c curves of the samples were similar to the theoretical curves which explains a fall of J_c due to Coulomb blockade for low T_c superconductor. Also, the annealed sample showed high junction resistance and low E_J, owing to a low carrier concentration by annealing.

Original language	English
Pages (from-to)	1102-1105
Number of pages	4
Journal	Superconductor Science and Technology
Volume	14
Issue number	12
DOIs	https://doi.org/10.1088/0953-2048/14/12/325
Publication status	Published - 2001 Dec 1

ASJC Scopus subject areas

Ceramics and Composites
Condensed Matter Physics
Metals and Alloys
Electrical and Electronic Engineering
Materials Chemistry

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10.1088/0953-2048/14/12/325

Cite this

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title = "Junction area dependence of critical current density in Bi-2212 stacked junction",

abstract = "We report the characteristics of stacked junctions fabricated by the focused ion beam etching method on a Bi-2212 whisker with low carrier concentration. In order to achieve low carrier concentration, the whisker edges were etched and the sample was annealed in 1 atm of flowing Ar at 200 °C for 1h. A drop of critical current density (Jc) occurred when junction area (S) was decreased to the submicron range, and then the charging energy of the stack (Ec) was comparable to Josephson coupling energy (EJ). The Ec/EJ-Jc curves of the samples were similar to the theoretical curves which explains a fall of Jc due to Coulomb blockade for low Tc superconductor. Also, the annealed sample showed high junction resistance and low EJ, owing to a low carrier concentration by annealing.",

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T1 - Junction area dependence of critical current density in Bi-2212 stacked junction

AU - Kawae, T.

AU - Inomata, K.

AU - Kim, S. J.

AU - Latyshev, Y. I.

AU - Nakajima, K.

AU - Yamashita, T.

AU - Kishida, S.

AU - Hatano, T.

PY - 2001/12/1

Y1 - 2001/12/1

N2 - We report the characteristics of stacked junctions fabricated by the focused ion beam etching method on a Bi-2212 whisker with low carrier concentration. In order to achieve low carrier concentration, the whisker edges were etched and the sample was annealed in 1 atm of flowing Ar at 200 °C for 1h. A drop of critical current density (Jc) occurred when junction area (S) was decreased to the submicron range, and then the charging energy of the stack (Ec) was comparable to Josephson coupling energy (EJ). The Ec/EJ-Jc curves of the samples were similar to the theoretical curves which explains a fall of Jc due to Coulomb blockade for low Tc superconductor. Also, the annealed sample showed high junction resistance and low EJ, owing to a low carrier concentration by annealing.

AB - We report the characteristics of stacked junctions fabricated by the focused ion beam etching method on a Bi-2212 whisker with low carrier concentration. In order to achieve low carrier concentration, the whisker edges were etched and the sample was annealed in 1 atm of flowing Ar at 200 °C for 1h. A drop of critical current density (Jc) occurred when junction area (S) was decreased to the submicron range, and then the charging energy of the stack (Ec) was comparable to Josephson coupling energy (EJ). The Ec/EJ-Jc curves of the samples were similar to the theoretical curves which explains a fall of Jc due to Coulomb blockade for low Tc superconductor. Also, the annealed sample showed high junction resistance and low EJ, owing to a low carrier concentration by annealing.

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Junction area dependence of critical current density in Bi-2212 stacked junction

Abstract

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