Junction parameter control of Bi2Sr2CaCu2O8+δ stacked junctions by annealing

K. Inomata; T. Kawae; K. Nakajima; S. J. Kim; T. Yamashita

doi:10.1063/1.1542679

Junction parameter control of Bi₂Sr₂CaCu₂O_8+δ stacked junctions by annealing

K. Inomata, T. Kawae, K. Nakajima, S. J. Kim, T. Yamashita

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34 Citations (Scopus)

Abstract

A study was performed on junction parameter control of Bi₂Sr₂CaCu₂O_8+δ stacked junctions. The relationship of critical current density (J_c), junction resistance (R_N) and the carrier density was clarified in Bi₂Sr₂CaCu₂O_8+δ whiskers by changing the carrier density with an annealing process. The results showed that the values of J_c and R_N was controlled by the change in the carrier density.

Original language	English
Pages (from-to)	769-771
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	5
DOIs	https://doi.org/10.1063/1.1542679
Publication status	Published - 2003 Feb 3
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1542679

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abstract = "A study was performed on junction parameter control of Bi2Sr2CaCu2O8+δ stacked junctions. The relationship of critical current density (Jc), junction resistance (RN) and the carrier density was clarified in Bi2Sr2CaCu2O8+δ whiskers by changing the carrier density with an annealing process. The results showed that the values of Jc and RN was controlled by the change in the carrier density.",

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AU - Inomata, K.

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AU - Yamashita, T.

PY - 2003/2/3

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AB - A study was performed on junction parameter control of Bi2Sr2CaCu2O8+δ stacked junctions. The relationship of critical current density (Jc), junction resistance (RN) and the carrier density was clarified in Bi2Sr2CaCu2O8+δ whiskers by changing the carrier density with an annealing process. The results showed that the values of Jc and RN was controlled by the change in the carrier density.

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Junction parameter control of Bi₂Sr₂CaCu₂O_8+δ stacked junctions by annealing

Abstract

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