A study was performed on junction parameter control of Bi2Sr2CaCu2O8+δ stacked junctions. The relationship of critical current density (Jc), junction resistance (RN) and the carrier density was clarified in Bi2Sr2CaCu2O8+δ whiskers by changing the carrier density with an annealing process. The results showed that the values of Jc and RN was controlled by the change in the carrier density.
|Number of pages||3|
|Journal||Applied Physics Letters|
|Publication status||Published - 2003 Feb 3|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)