Kinetic study of WSix‐CVD processes—a comparison of WF6/SiH4 and WF6/Si2H6 reaction systems

Takeyasu Saito; Yukihiro Shimogaki; Yasuyuki Egashira; Hiroshi Komiyama; Katsuro Sugawara; Katsumi Takahiro; Shinji Nagata; Sadae Yamaguchi

doi:10.1002/ecjb.4420781009

Kinetic study of WSi_x‐CVD processes—a comparison of WF₆/SiH₄ and WF₆/Si₂H₆ reaction systems

Takeyasu Saito, Yukihiro Shimogaki, Yasuyuki Egashira, Hiroshi Komiyama, Katsuro Sugawara, Katsumi Takahiro, Shinji Nagata, Sadae Yamaguchi

Materials Design Division

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Kinetic study on chemical vapor deposition of tungsten silicide (CVD‐WSi_x) by the mixture of WF₆/SiH₄ or WF₆/Si₂H₆ was made using an externally heated tubular reactor. By investigating the effect of the film precipitation area on the gas phase volume ratio (the S/V ratio) in film formation, it can be concluded that the initial step of film precipitation was dominated by radical chain reaction. In addition, a new process to form WSi_x using preliminary excitation of gas phase reaction at the inlet of the reactor was proposed. Using this process, film composition was controlled and the formation of WSi_2.5 films with excellent step coverage was realized.

Original language	English
Pages (from-to)	73-84
Number of pages	12
Journal	Electronics and Communications in Japan (Part II: Electronics)
Volume	78
Issue number	10
DOIs	https://doi.org/10.1002/ecjb.4420781009
Publication status	Published - 1995 Jan 1

Keywords

Step coverage
film composition
preactivative heating
radical chain reaction
sticking probability

ASJC Scopus subject areas

Physics and Astronomy(all)
Computer Networks and Communications
Electrical and Electronic Engineering

Access to Document

10.1002/ecjb.4420781009

Cite this

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title = "Kinetic study of WSix‐CVD processes—a comparison of WF6/SiH4 and WF6/Si2H6 reaction systems",

abstract = "Kinetic study on chemical vapor deposition of tungsten silicide (CVD‐WSix) by the mixture of WF6/SiH4 or WF6/Si2H6 was made using an externally heated tubular reactor. By investigating the effect of the film precipitation area on the gas phase volume ratio (the S/V ratio) in film formation, it can be concluded that the initial step of film precipitation was dominated by radical chain reaction. In addition, a new process to form WSix using preliminary excitation of gas phase reaction at the inlet of the reactor was proposed. Using this process, film composition was controlled and the formation of WSi2.5 films with excellent step coverage was realized.",

keywords = "Step coverage, film composition, preactivative heating, radical chain reaction, sticking probability",

author = "Takeyasu Saito and Yukihiro Shimogaki and Yasuyuki Egashira and Hiroshi Komiyama and Katsuro Sugawara and Katsumi Takahiro and Shinji Nagata and Sadae Yamaguchi",

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T1 - Kinetic study of WSix‐CVD processes—a comparison of WF6/SiH4 and WF6/Si2H6 reaction systems

AU - Saito, Takeyasu

AU - Shimogaki, Yukihiro

AU - Egashira, Yasuyuki

AU - Komiyama, Hiroshi

AU - Sugawara, Katsuro

AU - Takahiro, Katsumi

AU - Nagata, Shinji

AU - Yamaguchi, Sadae

PY - 1995/1/1

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AB - Kinetic study on chemical vapor deposition of tungsten silicide (CVD‐WSix) by the mixture of WF6/SiH4 or WF6/Si2H6 was made using an externally heated tubular reactor. By investigating the effect of the film precipitation area on the gas phase volume ratio (the S/V ratio) in film formation, it can be concluded that the initial step of film precipitation was dominated by radical chain reaction. In addition, a new process to form WSix using preliminary excitation of gas phase reaction at the inlet of the reactor was proposed. Using this process, film composition was controlled and the formation of WSi2.5 films with excellent step coverage was realized.

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KW - film composition

KW - preactivative heating

KW - radical chain reaction

KW - sticking probability

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