Kinetic study of WSix‐CVD processes—a comparison of WF6/SiH4 and WF6/Si2H6 reaction systems

Takeyasu Saito, Yukihiro Shimogaki, Yasuyuki Egashira, Hiroshi Komiyama, Katsuro Sugawara, Katsumi Takahiro, Shinji Nagata, Sadae Yamaguchi

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


Kinetic study on chemical vapor deposition of tungsten silicide (CVD‐WSix) by the mixture of WF6/SiH4 or WF6/Si2H6 was made using an externally heated tubular reactor. By investigating the effect of the film precipitation area on the gas phase volume ratio (the S/V ratio) in film formation, it can be concluded that the initial step of film precipitation was dominated by radical chain reaction. In addition, a new process to form WSix using preliminary excitation of gas phase reaction at the inlet of the reactor was proposed. Using this process, film composition was controlled and the formation of WSi2.5 films with excellent step coverage was realized.

Original languageEnglish
Pages (from-to)73-84
Number of pages12
JournalElectronics and Communications in Japan (Part II: Electronics)
Issue number10
Publication statusPublished - 1995 Jan 1


  • Step coverage
  • film composition
  • preactivative heating
  • radical chain reaction
  • sticking probability

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Computer Networks and Communications
  • Electrical and Electronic Engineering


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