Kinetics and mechanism of atomic layer epitaxy of GaAs using trimethylgallium

H. Ohno; S. Goto; Y. Nomura; Y. Morishita; Y. Katayama

doi:10.1016/0169-4332(94)90213-5

Kinetics and mechanism of atomic layer epitaxy of GaAs using trimethylgallium

H. Ohno, S. Goto, Y. Nomura, Y. Morishita, Y. Katayama

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Optoelectronics Technology Research Laboratory

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Abstract

The desorption time constant of carbon-related species from clean GaAs surfaces exposed to trimethylgallium (TMGa), measured by in situ Auger electron spectroscopy, is of the order of 100 s in the temperature range where atomic layer epitaxy of GaAs takes place. A set of rate equations based on the adsorbate-inhibition model using this desorption time constant is shown to reproduce atomic layer epitaxy growth results: the GaAs growth rate dependence on the TMGa supply duration and the growth rate of the double TMGa pulse experiments with purge time in between two TMGa pulses. The origin of the remaining discrepancies is discussed.

Original language	English
Pages (from-to)	164-170
Number of pages	7
Journal	Applied Surface Science
Volume	82-83
Issue number	C
DOIs	https://doi.org/10.1016/0169-4332(94)90213-5
Publication status	Published - 1994 Dec 2

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abstract = "The desorption time constant of carbon-related species from clean GaAs surfaces exposed to trimethylgallium (TMGa), measured by in situ Auger electron spectroscopy, is of the order of 100 s in the temperature range where atomic layer epitaxy of GaAs takes place. A set of rate equations based on the adsorbate-inhibition model using this desorption time constant is shown to reproduce atomic layer epitaxy growth results: the GaAs growth rate dependence on the TMGa supply duration and the growth rate of the double TMGa pulse experiments with purge time in between two TMGa pulses. The origin of the remaining discrepancies is discussed.",

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AU - Ohno, H.

AU - Goto, S.

AU - Nomura, Y.

AU - Morishita, Y.

AU - Katayama, Y.

PY - 1994/12/2

Y1 - 1994/12/2

N2 - The desorption time constant of carbon-related species from clean GaAs surfaces exposed to trimethylgallium (TMGa), measured by in situ Auger electron spectroscopy, is of the order of 100 s in the temperature range where atomic layer epitaxy of GaAs takes place. A set of rate equations based on the adsorbate-inhibition model using this desorption time constant is shown to reproduce atomic layer epitaxy growth results: the GaAs growth rate dependence on the TMGa supply duration and the growth rate of the double TMGa pulse experiments with purge time in between two TMGa pulses. The origin of the remaining discrepancies is discussed.

AB - The desorption time constant of carbon-related species from clean GaAs surfaces exposed to trimethylgallium (TMGa), measured by in situ Auger electron spectroscopy, is of the order of 100 s in the temperature range where atomic layer epitaxy of GaAs takes place. A set of rate equations based on the adsorbate-inhibition model using this desorption time constant is shown to reproduce atomic layer epitaxy growth results: the GaAs growth rate dependence on the TMGa supply duration and the growth rate of the double TMGa pulse experiments with purge time in between two TMGa pulses. The origin of the remaining discrepancies is discussed.

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JO - Applied Surface Science

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Kinetics and mechanism of atomic layer epitaxy of GaAs using trimethylgallium

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